III-nitride nanowires for emissive display technology

III-nitride nanowires for emissive display technology

The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional subst...

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Bibliographic Details
Main Authors: Veeramuthu Vignesh, Yuanpeng Wu, Sung-Un Kim, Jeong-Kyun Oh, Chandran Bagavath, Dae-Young Um, Zetian Mi, Yong-Ho Ra
Format: Article
Language:English
Published: Taylor & Francis Group 2024-01-01
Series:Journal of Information Display
Subjects:
µ-LED
full-color LED
InGaN nanowires
multi-quantum well (MQW)
display technology
Online Access:https://www.tandfonline.com/doi/10.1080/15980316.2023.2282937

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