Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors
Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/...
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MDPI AG
2022-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/7/1167 |
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| author | Qi Li Junchen Dong Dedong Han Dengqin Xu Jingyi Wang Yi Wang |
| author_facet | Qi Li Junchen Dong Dedong Han Dengqin Xu Jingyi Wang Yi Wang |
| author_sort | Qi Li |
| collection | DOAJ |
| description | Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that V<sub>hump</sub>–V<sub>ON</sub> was negatively correlated with the thickness of the bottom ZnO layer (10, 20, 30, and 40 nm), while it was positively correlated with the thickness of the top ITO layer (3, 5, 7, and 9 nm), where V<sub>hump</sub> is the gate voltage corresponding to the occurrence of the hump and V<sub>ON</sub> is the turn-on voltage. The results demonstrated that carrier transport forms dual current paths through both the ZnO and ITO layers, synthetically determining the hump characteristics of the ZnO/ITO TFTs. Notably, the hump was effectively eliminated by reducing the ITO thickness to no more than 5 nm. Furthermore, the hump characteristics of the ZnO/ITO TFTs under positive gate-bias stress (PBS) were examined. This work broadens the practical application of TCO and provides a promising method for solving the hump phenomenon of oxide TFTs. |
| first_indexed | 2024-03-09T11:35:25Z |
| format | Article |
| id | doaj.art-e3e66365f5a64fb4bf6ee6eedde71b0e |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T11:35:25Z |
| publishDate | 2022-03-01 |
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| spelling | doaj.art-e3e66365f5a64fb4bf6ee6eedde71b0e2023-11-30T23:45:27ZengMDPI AGNanomaterials2079-49912022-03-01127116710.3390/nano12071167Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film TransistorsQi Li0Junchen Dong1Dedong Han2Dengqin Xu3Jingyi Wang4Yi Wang5Institute of Microelectronics, Peking University, Beijing 100871, ChinaSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaTransparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that V<sub>hump</sub>–V<sub>ON</sub> was negatively correlated with the thickness of the bottom ZnO layer (10, 20, 30, and 40 nm), while it was positively correlated with the thickness of the top ITO layer (3, 5, 7, and 9 nm), where V<sub>hump</sub> is the gate voltage corresponding to the occurrence of the hump and V<sub>ON</sub> is the turn-on voltage. The results demonstrated that carrier transport forms dual current paths through both the ZnO and ITO layers, synthetically determining the hump characteristics of the ZnO/ITO TFTs. Notably, the hump was effectively eliminated by reducing the ITO thickness to no more than 5 nm. Furthermore, the hump characteristics of the ZnO/ITO TFTs under positive gate-bias stress (PBS) were examined. This work broadens the practical application of TCO and provides a promising method for solving the hump phenomenon of oxide TFTs.https://www.mdpi.com/2079-4991/12/7/1167transparent conductive oxidesInSnOZnOthin-film transistorshump phenomenonchannel structure |
| spellingShingle | Qi Li Junchen Dong Dedong Han Dengqin Xu Jingyi Wang Yi Wang Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors Nanomaterials transparent conductive oxides InSnO ZnO thin-film transistors hump phenomenon channel structure |
| title | Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors |
| title_full | Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors |
| title_fullStr | Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors |
| title_full_unstemmed | Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors |
| title_short | Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors |
| title_sort | structural engineering effects on hump characteristics of zno insno heterojunction thin film transistors |
| topic | transparent conductive oxides InSnO ZnO thin-film transistors hump phenomenon channel structure |
| url | https://www.mdpi.com/2079-4991/12/7/1167 |
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