Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/...

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Bibliographic Details
Main Authors: Qi Li, Junchen Dong, Dedong Han, Dengqin Xu, Jingyi Wang, Yi Wang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Nanomaterials
Subjects:
transparent conductive oxides
InSnO
ZnO
thin-film transistors
hump phenomenon
channel structure
Online Access:https://www.mdpi.com/2079-4991/12/7/1167

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