Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism
Digital latches are becoming more sensitive to Multiple-Node Upsets (MNUs) due to lower supply voltage and higher integration density of devices. The hardening technique based on using multiple C-Elements (CEs) (the CE acts as an inverter if its inputs are equal to each other, otherwise holds the hi...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9268098/ |
| _version_ | 1811210597946097664 |
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| author | Qiang Li Xiaohui Su Jing Guo Chunhua Qi |
| author_facet | Qiang Li Xiaohui Su Jing Guo Chunhua Qi |
| author_sort | Qiang Li |
| collection | DOAJ |
| description | Digital latches are becoming more sensitive to Multiple-Node Upsets (MNUs) due to lower supply voltage and higher integration density of devices. The hardening technique based on using multiple C-Elements (CEs) (the CE acts as an inverter if its inputs are equal to each other, otherwise holds the high-impedance output) has been used to propose the MNU tolerance latches. However, it brings important hardware overheads. Based on the radiation mechanism, this paper proposes an MNU tolerance latch with self-recovery properties to prevent Singe Node Upset (SNU) and MNU propagation in the feedback loops, and providing the smallest overheads in terms of power, delay, rising time <inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {r}}$ </tex-math></inline-formula>, falling time <inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {f}}$ </tex-math></inline-formula> and Power-Delay-Area-Product (PDAP) metric compared with the existing MNU tolerance latches. |
| first_indexed | 2024-04-12T04:57:26Z |
| format | Article |
| id | doaj.art-e40971303150418998faccec968987ed |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-12T04:57:26Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-e40971303150418998faccec968987ed2022-12-22T03:47:04ZengIEEEIEEE Access2169-35362020-01-01822015222016410.1109/ACCESS.2020.30401899268098Self-Recovery Tolerance Latch Design Based on the Radiation MechanismQiang Li0Xiaohui Su1https://orcid.org/0000-0002-6928-4318Jing Guo2https://orcid.org/0000-0002-6434-5281Chunhua Qi3School of Instrument and Electronics, North University of China, Taiyuan, ChinaChinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaSchool of Instrument and Electronics, North University of China, Taiyuan, ChinaSpace Environment and Simulation Research Infrastructure, Harbin Institute of Technology, Harbin, ChinaDigital latches are becoming more sensitive to Multiple-Node Upsets (MNUs) due to lower supply voltage and higher integration density of devices. The hardening technique based on using multiple C-Elements (CEs) (the CE acts as an inverter if its inputs are equal to each other, otherwise holds the high-impedance output) has been used to propose the MNU tolerance latches. However, it brings important hardware overheads. Based on the radiation mechanism, this paper proposes an MNU tolerance latch with self-recovery properties to prevent Singe Node Upset (SNU) and MNU propagation in the feedback loops, and providing the smallest overheads in terms of power, delay, rising time <inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {r}}$ </tex-math></inline-formula>, falling time <inline-formula> <tex-math notation="LaTeX">$\text{t}_{\mathrm {f}}$ </tex-math></inline-formula> and Power-Delay-Area-Product (PDAP) metric compared with the existing MNU tolerance latches.https://ieeexplore.ieee.org/document/9268098/Hardeningupsettoleranceradiation-induced voltage pulselatch |
| spellingShingle | Qiang Li Xiaohui Su Jing Guo Chunhua Qi Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism IEEE Access Hardening upset tolerance radiation-induced voltage pulse latch |
| title | Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism |
| title_full | Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism |
| title_fullStr | Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism |
| title_full_unstemmed | Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism |
| title_short | Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism |
| title_sort | self recovery tolerance latch design based on the radiation mechanism |
| topic | Hardening upset tolerance radiation-induced voltage pulse latch |
| url | https://ieeexplore.ieee.org/document/9268098/ |
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