Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide

Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ~1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm<sup>-1</sup> at a bias voltage of -8V with...

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Bibliographic Details
Main Authors: E. Alkhazraji, A. M. Ragheb, M. A. Esmail, Q. Tareq, H. Fathallah, S. A. Alshebeili, K. K. Qureshi, M. Z. M. Khan
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Quantum-dash
quantum-dot
electro-absorption
electro-optic
modulators
Online Access:https://ieeexplore.ieee.org/document/9072590/

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