The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
The most common n-type dopant, Si, was implanted into bulk (-201) β-Ga2O3 at total doses from 2x1013-2x1015 cm-2 and annealed at 1100 °C for 10-120 secs in either O2 or N2 ambients. Secondary Ion Mass Spectrometry profiling showed a significant effect of the annealing ambient on the Si diffusivity....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5115149 |
| _version_ | 1828782207107334144 |
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| author | Ribhu Sharma Mark E. Law Chaker Fares Marko Tadjer Fan Ren A. Kuramata S. J. Pearton |
| author_facet | Ribhu Sharma Mark E. Law Chaker Fares Marko Tadjer Fan Ren A. Kuramata S. J. Pearton |
| author_sort | Ribhu Sharma |
| collection | DOAJ |
| description | The most common n-type dopant, Si, was implanted into bulk (-201) β-Ga2O3 at total doses from 2x1013-2x1015 cm-2 and annealed at 1100 °C for 10-120 secs in either O2 or N2 ambients. Secondary Ion Mass Spectrometry profiling showed a significant effect of the annealing ambient on the Si diffusivity. In the case of O2 annealing, there was extensive redistribution of the Si across the entire dose range, while in sharp contrast, the use of N2 annealing suppressed the Si diffusion. The results are consistent with a defect-assisted process. Excellent fits to the Si profiles were obtained with the FLOOPS simulator, assuming mobile vacancy/defect concentrations as the important factor for the difference in the O2 vs N2 annealing ambients. One possibility is that for N2 anneals, more Ga vacancies are created, enabling interstitial Si to migrate onto a substitutional Ga site where it has low diffusivity. The N2 ambient also suppresses loss of Si to the surface, with >90% of the initial dose retained after annealing at 1100 °C for 120 secs, compared to 66-77% with O2 anneals under the same conditions. |
| first_indexed | 2024-12-11T17:45:06Z |
| format | Article |
| id | doaj.art-e40f10c3837b4983897a3a7986f55ceb |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T17:45:06Z |
| publishDate | 2019-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e40f10c3837b4983897a3a7986f55ceb2022-12-22T00:56:24ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085111085111-610.1063/1.5115149047908ADVThe role of annealing ambient on diffusion of implanted Si in β-Ga2O3Ribhu Sharma0Mark E. Law1Chaker Fares2Marko Tadjer3Fan Ren4A. Kuramata5S. J. Pearton6Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USAU.S. Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC 20375, USADepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USATamura Corp. and Novel Crystal Technology, Sayama-city, Saitama 350-1328, JapanDepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USAThe most common n-type dopant, Si, was implanted into bulk (-201) β-Ga2O3 at total doses from 2x1013-2x1015 cm-2 and annealed at 1100 °C for 10-120 secs in either O2 or N2 ambients. Secondary Ion Mass Spectrometry profiling showed a significant effect of the annealing ambient on the Si diffusivity. In the case of O2 annealing, there was extensive redistribution of the Si across the entire dose range, while in sharp contrast, the use of N2 annealing suppressed the Si diffusion. The results are consistent with a defect-assisted process. Excellent fits to the Si profiles were obtained with the FLOOPS simulator, assuming mobile vacancy/defect concentrations as the important factor for the difference in the O2 vs N2 annealing ambients. One possibility is that for N2 anneals, more Ga vacancies are created, enabling interstitial Si to migrate onto a substitutional Ga site where it has low diffusivity. The N2 ambient also suppresses loss of Si to the surface, with >90% of the initial dose retained after annealing at 1100 °C for 120 secs, compared to 66-77% with O2 anneals under the same conditions.http://dx.doi.org/10.1063/1.5115149 |
| spellingShingle | Ribhu Sharma Mark E. Law Chaker Fares Marko Tadjer Fan Ren A. Kuramata S. J. Pearton The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 AIP Advances |
| title | The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 |
| title_full | The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 |
| title_fullStr | The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 |
| title_full_unstemmed | The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 |
| title_short | The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 |
| title_sort | role of annealing ambient on diffusion of implanted si in β ga2o3 |
| url | http://dx.doi.org/10.1063/1.5115149 |
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