The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
The most common n-type dopant, Si, was implanted into bulk (-201) β-Ga2O3 at total doses from 2x1013-2x1015 cm-2 and annealed at 1100 °C for 10-120 secs in either O2 or N2 ambients. Secondary Ion Mass Spectrometry profiling showed a significant effect of the annealing ambient on the Si diffusivity....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5115149 |