Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD
Abstract van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-07-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202201324 |
| _version_ | 1818177479425130496 |
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| author | Bo Tian Junzhu Li Mingguang Chen Haocong Dong Xixiang Zhang |
| author_facet | Bo Tian Junzhu Li Mingguang Chen Haocong Dong Xixiang Zhang |
| author_sort | Bo Tian |
| collection | DOAJ |
| description | Abstract van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have various limitations. The CVD synthesis of high‐quality large‐area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, the authors propose an in situ CVD growth strategy for synthesizing wafer‐scale AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single‐crystal CuNi(111) alloys are prepared on sapphire, followed by the pre‐dissolution of carbon atoms. Single‐crystal monolayer hBN is synthesized on a plasma‐cleaned CuNi(111) surface. Then, a single‐crystal monolayer graphene is epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single‐crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as‐grown 2D layers are investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large‐scale single‐crystal low‐dimensional van der Waals heterostructures and facilitates their application in future 2D‐material‐based integrated circuits. |
| first_indexed | 2024-12-11T20:32:44Z |
| format | Article |
| id | doaj.art-e4178f75ec7549acaa1549464662083d |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-11T20:32:44Z |
| publishDate | 2022-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-e4178f75ec7549acaa1549464662083d2022-12-22T00:51:45ZengWileyAdvanced Science2198-38442022-07-01921n/an/a10.1002/advs.202201324Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVDBo Tian0Junzhu Li1Mingguang Chen2Haocong Dong3Xixiang Zhang4Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaPhysical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaPhysical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaEleven‐Dimensional Nanomaterial Research Institute Xiamen 361000 P. R. ChinaPhysical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAbstract van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have various limitations. The CVD synthesis of high‐quality large‐area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, the authors propose an in situ CVD growth strategy for synthesizing wafer‐scale AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single‐crystal CuNi(111) alloys are prepared on sapphire, followed by the pre‐dissolution of carbon atoms. Single‐crystal monolayer hBN is synthesized on a plasma‐cleaned CuNi(111) surface. Then, a single‐crystal monolayer graphene is epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single‐crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as‐grown 2D layers are investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large‐scale single‐crystal low‐dimensional van der Waals heterostructures and facilitates their application in future 2D‐material‐based integrated circuits.https://doi.org/10.1002/advs.202201324AAB‐stackinggraphenehBNin situ CVDvan der Waals heterostructures |
| spellingShingle | Bo Tian Junzhu Li Mingguang Chen Haocong Dong Xixiang Zhang Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD Advanced Science AAB‐stacking graphene hBN in situ CVD van der Waals heterostructures |
| title | Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD |
| title_full | Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD |
| title_fullStr | Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD |
| title_full_unstemmed | Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD |
| title_short | Synthesis of AAB‐Stacked Single‐Crystal Graphene/hBN/Graphene Trilayer van der Waals Heterostructures by In Situ CVD |
| title_sort | synthesis of aab stacked single crystal graphene hbn graphene trilayer van der waals heterostructures by in situ cvd |
| topic | AAB‐stacking graphene hBN in situ CVD van der Waals heterostructures |
| url | https://doi.org/10.1002/advs.202201324 |
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