Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method
ABSTRACTSeparated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which indicates crystal quality of the active layers, and a...
Main Authors: | Keito Mori-Tamamura, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Junji Hirama, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya |
---|---|
Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2024-12-01
|
Series: | Science and Technology of Advanced Materials: Methods |
Subjects: | |
Online Access: | https://www.tandfonline.com/doi/10.1080/27660400.2024.2315027 |
Similar Items
-
Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells
by: Yachen Wang, et al.
Published: (2022-09-01) -
Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells
by: Yachen Wang, et al.
Published: (2022-06-01) -
Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
by: Shiqiang Lu, et al.
Published: (2021-06-01) -
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
by: George Christian, et al.
Published: (2018-09-01) -
InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition
by: Chunyu Zhao, et al.
Published: (2020-01-01)