Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches
Current research efforts in the field of the semiconducting chalcogenide perovskites are directed towards the fabrication of thin films and subsequently determine their performance in the photovoltaic application. These efforts are motivated by the outstanding properties of this class of materials i...
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MDPI AG
2024-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/14/3/267 |
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| author | Tim Freund Sumbal Jamshaid Milad Monavvar Peter Wellmann |
| author_facet | Tim Freund Sumbal Jamshaid Milad Monavvar Peter Wellmann |
| author_sort | Tim Freund |
| collection | DOAJ |
| description | Current research efforts in the field of the semiconducting chalcogenide perovskites are directed towards the fabrication of thin films and subsequently determine their performance in the photovoltaic application. These efforts are motivated by the outstanding properties of this class of materials in terms of stability, high absorption coefficient near the band edge and no significant health concerns compared to their halide counterparts. The approach followed here is to use stacked precursor layers and is adopted from other chalcogenide photovoltaic materials like the kesterites and chalcopyrites. The successful synthesis of BaZrS<sub>3</sub> from stacked layers of BaS and Zr and annealing at high temperatures (~1100 °C) with the addition of elemental sulfur is demonstrated. However, the film shows the presence of secondary phases and a flawed surface. As an alternative to this, BaS<sub>3</sub> could be used as precursor due to its low melting point of 554 °C. Previously, the fabrication of BaS<sub>3</sub> films was demonstrated, but in order to utilize them in the fabrication of BaZrS<sub>3</sub> thin films, their microstructure and processing are further improved in this work by reducing the synthesis temperature to 300 °C, resulting in a smoother surface. This work lays the groundwork for future research in the fabrication of chalcogenide perovskites utilizing stacked layers and BaS<sub>3</sub>. |
| first_indexed | 2024-04-24T18:25:04Z |
| format | Article |
| id | doaj.art-e4260d744e504c2a8c503d25c4719ed9 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-24T18:25:04Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-e4260d744e504c2a8c503d25c4719ed92024-03-27T13:32:31ZengMDPI AGCrystals2073-43522024-03-0114326710.3390/cryst14030267Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature ApproachesTim Freund0Sumbal Jamshaid1Milad Monavvar2Peter Wellmann3Crystal Growth Lab, Department of Materials Science and Engineering 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058 Erlangen, GermanyCrystal Growth Lab, Department of Materials Science and Engineering 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058 Erlangen, GermanyCrystal Growth Lab, Department of Materials Science and Engineering 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058 Erlangen, GermanyCrystal Growth Lab, Department of Materials Science and Engineering 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058 Erlangen, GermanyCurrent research efforts in the field of the semiconducting chalcogenide perovskites are directed towards the fabrication of thin films and subsequently determine their performance in the photovoltaic application. These efforts are motivated by the outstanding properties of this class of materials in terms of stability, high absorption coefficient near the band edge and no significant health concerns compared to their halide counterparts. The approach followed here is to use stacked precursor layers and is adopted from other chalcogenide photovoltaic materials like the kesterites and chalcopyrites. The successful synthesis of BaZrS<sub>3</sub> from stacked layers of BaS and Zr and annealing at high temperatures (~1100 °C) with the addition of elemental sulfur is demonstrated. However, the film shows the presence of secondary phases and a flawed surface. As an alternative to this, BaS<sub>3</sub> could be used as precursor due to its low melting point of 554 °C. Previously, the fabrication of BaS<sub>3</sub> films was demonstrated, but in order to utilize them in the fabrication of BaZrS<sub>3</sub> thin films, their microstructure and processing are further improved in this work by reducing the synthesis temperature to 300 °C, resulting in a smoother surface. This work lays the groundwork for future research in the fabrication of chalcogenide perovskites utilizing stacked layers and BaS<sub>3</sub>.https://www.mdpi.com/2073-4352/14/3/267chalcogenide perovskitesthin filmsbarium trisulphidestacked layers |
| spellingShingle | Tim Freund Sumbal Jamshaid Milad Monavvar Peter Wellmann Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches Crystals chalcogenide perovskites thin films barium trisulphide stacked layers |
| title | Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches |
| title_full | Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches |
| title_fullStr | Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches |
| title_full_unstemmed | Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches |
| title_short | Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approaches |
| title_sort | synthesis of bazrs sub 3 sub and bas sub 3 sub thin films high and low temperature approaches |
| topic | chalcogenide perovskites thin films barium trisulphide stacked layers |
| url | https://www.mdpi.com/2073-4352/14/3/267 |
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