Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process
Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, tw...
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| Format: | Article |
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MDPI AG
2022-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/11/1869 |
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| author | Yaozu Guo Haolan Ma Jiang Lan Yiming Liao Xiaoli Ji |
| author_facet | Yaozu Guo Haolan Ma Jiang Lan Yiming Liao Xiaoli Ji |
| author_sort | Yaozu Guo |
| collection | DOAJ |
| description | Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 10<sup>9</sup> cmHz<sup>1/2</sup>/W at 25 μA and a maximum of 6.2 × 10<sup>8</sup> cmHz<sup>1/2</sup>/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption. |
| first_indexed | 2024-03-09T18:50:23Z |
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| id | doaj.art-e4350d80e6bc4bcd8708b7bf5c82f241 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T18:50:23Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
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| series | Micromachines |
| spelling | doaj.art-e4350d80e6bc4bcd8708b7bf5c82f2412023-11-24T05:54:28ZengMDPI AGMicromachines2072-666X2022-10-011311186910.3390/mi13111869Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS ProcessYaozu Guo0Haolan Ma1Jiang Lan2Yiming Liao3Xiaoli Ji4College of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaMicrobolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 10<sup>9</sup> cmHz<sup>1/2</sup>/W at 25 μA and a maximum of 6.2 × 10<sup>8</sup> cmHz<sup>1/2</sup>/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.https://www.mdpi.com/2072-666X/13/11/1869salicide polysilicon thermistormicrobolometersstandard CMOS processuncooled infrared detector |
| spellingShingle | Yaozu Guo Haolan Ma Jiang Lan Yiming Liao Xiaoli Ji Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process Micromachines salicide polysilicon thermistor microbolometers standard CMOS process uncooled infrared detector |
| title | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
| title_full | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
| title_fullStr | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
| title_full_unstemmed | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
| title_short | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
| title_sort | impact of various thermistors on the properties of resistive microbolometers fabricated by cmos process |
| topic | salicide polysilicon thermistor microbolometers standard CMOS process uncooled infrared detector |
| url | https://www.mdpi.com/2072-666X/13/11/1869 |
| work_keys_str_mv | AT yaozuguo impactofvariousthermistorsonthepropertiesofresistivemicrobolometersfabricatedbycmosprocess AT haolanma impactofvariousthermistorsonthepropertiesofresistivemicrobolometersfabricatedbycmosprocess AT jianglan impactofvariousthermistorsonthepropertiesofresistivemicrobolometersfabricatedbycmosprocess AT yimingliao impactofvariousthermistorsonthepropertiesofresistivemicrobolometersfabricatedbycmosprocess AT xiaoliji impactofvariousthermistorsonthepropertiesofresistivemicrobolometersfabricatedbycmosprocess |