Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation

Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation

ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating t...

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Bibliographic Details
Main Authors: Aleksandar Atić, Xizhe Wang, Nikola Vuković, Novak Stanojević, Aleksandar Demić, Dragan Indjin, Jelena Radovanović
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Materials
Subjects:
wide-bandgap oxide semiconductors
resonant tunnelling
intersubband transitions
depolarisation shift
Online Access:https://www.mdpi.com/1996-1944/17/4/927

Internet

https://www.mdpi.com/1996-1944/17/4/927

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