Trap-Assisted Tunneling in the Schottky Barrier
The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structur...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2013-04-01
|
| Series: | Radioengineering |
| Subjects: | |
| Online Access: | http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf |
| Summary: | The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling. |
|---|---|
| ISSN: | 1210-2512 |