Trap-Assisted Tunneling in the Schottky Barrier
The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structur...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
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Spolecnost pro radioelektronicke inzenyrstvi
2013-04-01
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Series: | Radioengineering |
Subjects: | |
Online Access: | http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf |
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author | J. Racko J. Pechacek M. Mikolasek P. Benko A. Grmanova L. Harmatha J. Breza |
author_facet | J. Racko J. Pechacek M. Mikolasek P. Benko A. Grmanova L. Harmatha J. Breza |
author_sort | J. Racko |
collection | DOAJ |
description | The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling. |
first_indexed | 2024-04-14T02:33:52Z |
format | Article |
id | doaj.art-e46248a8eab044caa7d4174e0008c2fa |
institution | Directory Open Access Journal |
issn | 1210-2512 |
language | English |
last_indexed | 2024-04-14T02:33:52Z |
publishDate | 2013-04-01 |
publisher | Spolecnost pro radioelektronicke inzenyrstvi |
record_format | Article |
series | Radioengineering |
spelling | doaj.art-e46248a8eab044caa7d4174e0008c2fa2022-12-22T02:17:35ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122013-04-01221240244Trap-Assisted Tunneling in the Schottky BarrierJ. RackoJ. PechacekM. MikolasekP. BenkoA. GrmanovaL. HarmathaJ. BrezaThe paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdfTrap-assisteddirect tunnelingSchottky barrier |
spellingShingle | J. Racko J. Pechacek M. Mikolasek P. Benko A. Grmanova L. Harmatha J. Breza Trap-Assisted Tunneling in the Schottky Barrier Radioengineering Trap-assisted direct tunneling Schottky barrier |
title | Trap-Assisted Tunneling in the Schottky Barrier |
title_full | Trap-Assisted Tunneling in the Schottky Barrier |
title_fullStr | Trap-Assisted Tunneling in the Schottky Barrier |
title_full_unstemmed | Trap-Assisted Tunneling in the Schottky Barrier |
title_short | Trap-Assisted Tunneling in the Schottky Barrier |
title_sort | trap assisted tunneling in the schottky barrier |
topic | Trap-assisted direct tunneling Schottky barrier |
url | http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf |
work_keys_str_mv | AT jracko trapassistedtunnelingintheschottkybarrier AT jpechacek trapassistedtunnelingintheschottkybarrier AT mmikolasek trapassistedtunnelingintheschottkybarrier AT pbenko trapassistedtunnelingintheschottkybarrier AT agrmanova trapassistedtunnelingintheschottkybarrier AT lharmatha trapassistedtunnelingintheschottkybarrier AT jbreza trapassistedtunnelingintheschottkybarrier |