Trap-Assisted Tunneling in the Schottky Barrier

The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structur...

Full description

Bibliographic Details
Main Authors: J. Racko, J. Pechacek, M. Mikolasek, P. Benko, A. Grmanova, L. Harmatha, J. Breza
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2013-04-01
Series:Radioengineering
Subjects:
Online Access:http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf
_version_ 1817997218239479808
author J. Racko
J. Pechacek
M. Mikolasek
P. Benko
A. Grmanova
L. Harmatha
J. Breza
author_facet J. Racko
J. Pechacek
M. Mikolasek
P. Benko
A. Grmanova
L. Harmatha
J. Breza
author_sort J. Racko
collection DOAJ
description The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.
first_indexed 2024-04-14T02:33:52Z
format Article
id doaj.art-e46248a8eab044caa7d4174e0008c2fa
institution Directory Open Access Journal
issn 1210-2512
language English
last_indexed 2024-04-14T02:33:52Z
publishDate 2013-04-01
publisher Spolecnost pro radioelektronicke inzenyrstvi
record_format Article
series Radioengineering
spelling doaj.art-e46248a8eab044caa7d4174e0008c2fa2022-12-22T02:17:35ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122013-04-01221240244Trap-Assisted Tunneling in the Schottky BarrierJ. RackoJ. PechacekM. MikolasekP. BenkoA. GrmanovaL. HarmathaJ. BrezaThe paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdfTrap-assisteddirect tunnelingSchottky barrier
spellingShingle J. Racko
J. Pechacek
M. Mikolasek
P. Benko
A. Grmanova
L. Harmatha
J. Breza
Trap-Assisted Tunneling in the Schottky Barrier
Radioengineering
Trap-assisted
direct tunneling
Schottky barrier
title Trap-Assisted Tunneling in the Schottky Barrier
title_full Trap-Assisted Tunneling in the Schottky Barrier
title_fullStr Trap-Assisted Tunneling in the Schottky Barrier
title_full_unstemmed Trap-Assisted Tunneling in the Schottky Barrier
title_short Trap-Assisted Tunneling in the Schottky Barrier
title_sort trap assisted tunneling in the schottky barrier
topic Trap-assisted
direct tunneling
Schottky barrier
url http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf
work_keys_str_mv AT jracko trapassistedtunnelingintheschottkybarrier
AT jpechacek trapassistedtunnelingintheschottkybarrier
AT mmikolasek trapassistedtunnelingintheschottkybarrier
AT pbenko trapassistedtunnelingintheschottkybarrier
AT agrmanova trapassistedtunnelingintheschottkybarrier
AT lharmatha trapassistedtunnelingintheschottkybarrier
AT jbreza trapassistedtunnelingintheschottkybarrier