Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates
The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical ins...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9199877/ |
| _version_ | 1831807476453867520 |
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| author | Jianhua Liu Yu-Feng Guo Jun Zhang Jiafei Yao Maolin Zhang Chenyang Huang Ling Du |
| author_facet | Jianhua Liu Yu-Feng Guo Jun Zhang Jiafei Yao Maolin Zhang Chenyang Huang Ling Du |
| author_sort | Jianhua Liu |
| collection | DOAJ |
| description | The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate's edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates' lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained. |
| first_indexed | 2024-12-22T20:00:40Z |
| format | Article |
| id | doaj.art-e4ceb5e84da348c89e4919f5a27df74b |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T20:00:40Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-e4ceb5e84da348c89e4919f5a27df74b2022-12-21T18:14:17ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-0181031103810.1109/JEDS.2020.30247759199877Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field PlatesJianhua Liu0https://orcid.org/0000-0002-7290-328XYu-Feng Guo1https://orcid.org/0000-0002-1490-986XJun Zhang2https://orcid.org/0000-0002-5688-295XJiafei Yao3https://orcid.org/0000-0002-1469-0677Maolin Zhang4https://orcid.org/0000-0002-3388-4442Chenyang Huang5Ling Du6https://orcid.org/0000-0002-1023-2409College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, ChinaThe breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate's edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates' lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained.https://ieeexplore.ieee.org/document/9199877/AlGaN/GaN HEMTsgate and drain field platesanalytical modelbreakdown voltage |
| spellingShingle | Jianhua Liu Yu-Feng Guo Jun Zhang Jiafei Yao Maolin Zhang Chenyang Huang Ling Du Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates IEEE Journal of the Electron Devices Society AlGaN/GaN HEMTs gate and drain field plates analytical model breakdown voltage |
| title | Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates |
| title_full | Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates |
| title_fullStr | Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates |
| title_full_unstemmed | Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates |
| title_short | Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates |
| title_sort | analytical study on the breakdown characteristics of si substrated algan gan hemts with field plates |
| topic | AlGaN/GaN HEMTs gate and drain field plates analytical model breakdown voltage |
| url | https://ieeexplore.ieee.org/document/9199877/ |
| work_keys_str_mv | AT jianhualiu analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT yufengguo analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT junzhang analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT jiafeiyao analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT maolinzhang analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT chenyanghuang analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates AT lingdu analyticalstudyonthebreakdowncharacteristicsofsisubstratedalganganhemtswithfieldplates |