Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates
The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical ins...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Sprog: | English |
| Udgivet: |
IEEE
2020-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/9199877/ |