Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction
Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable p...
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| Format: | Article |
| Language: | English |
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Universiti Malaysia Pahang Publishing
2019-09-01
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| Series: | Journal of Mechanical Engineering and Sciences |
| Subjects: | |
| Online Access: | https://journal.ump.edu.my/jmes/article/view/441 |
| _version_ | 1797694697280372736 |
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| author | K. E. Kaharudin F. Salehuddin A. S. M. Zain Ameer F. Roslan |
| author_facet | K. E. Kaharudin F. Salehuddin A. S. M. Zain Ameer F. Roslan |
| author_sort | K. E. Kaharudin |
| collection | DOAJ |
| description | Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable performance of an ultra-small MOSFET. This paper proposes an approach to optimally design a n-type junctionless double-gate vertical MOSFET (n-JLDGVM) via hybrid Taguchi-grey relational analysis (GRA) with artificial neural networks (ANN) prediction. The device is designed using a combination of 2-D simulation tools (Silvaco) and hybrid Taguchi-GRA with a well-trained ANN prediction. The investigated device parameters consist of channel length (Lch), pillar thickness (Tp), channel doping (Nch) and source/drain doping (Nsd). The optimized design parameters of the device demonstrate a tolerable magnitude of on-state current (ION), off-state current (IOFF), on-off ratio, transconductance (gm), cut-off frequency (fT) and maximum oscillation frequency (fmax), measured at 2344.9 µA/µm, 2.53 pA/µm, 927 x 106, 4.78 mS/µm, 121.5 GHz and 2469 GHz respectively. |
| first_indexed | 2024-03-12T03:01:35Z |
| format | Article |
| id | doaj.art-e4dbb47b49ee40b7a7652575d0415b05 |
| institution | Directory Open Access Journal |
| issn | 2289-4659 2231-8380 |
| language | English |
| last_indexed | 2024-03-12T03:01:35Z |
| publishDate | 2019-09-01 |
| publisher | Universiti Malaysia Pahang Publishing |
| record_format | Article |
| series | Journal of Mechanical Engineering and Sciences |
| spelling | doaj.art-e4dbb47b49ee40b7a7652575d0415b052023-09-03T14:43:48ZengUniversiti Malaysia Pahang PublishingJournal of Mechanical Engineering and Sciences2289-46592231-83802019-09-011335455547910.15282/jmes.13.3.2019.16.0442Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN predictionK. E. Kaharudin0F. Salehuddin1A. S. M. Zain2Ameer F. Roslan3MiNE, CeTRI, Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia, Phone: +6062702361; Fax: +6062701045MiNE, CeTRI, Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia, Phone: +6062702361; Fax: +6062701045MiNE, CeTRI, Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia, Phone: +6062702361; Fax: +6062701045MiNE, CeTRI, Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia, Phone: +6062702361; Fax: +6062701045Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable performance of an ultra-small MOSFET. This paper proposes an approach to optimally design a n-type junctionless double-gate vertical MOSFET (n-JLDGVM) via hybrid Taguchi-grey relational analysis (GRA) with artificial neural networks (ANN) prediction. The device is designed using a combination of 2-D simulation tools (Silvaco) and hybrid Taguchi-GRA with a well-trained ANN prediction. The investigated device parameters consist of channel length (Lch), pillar thickness (Tp), channel doping (Nch) and source/drain doping (Nsd). The optimized design parameters of the device demonstrate a tolerable magnitude of on-state current (ION), off-state current (IOFF), on-off ratio, transconductance (gm), cut-off frequency (fT) and maximum oscillation frequency (fmax), measured at 2344.9 µA/µm, 2.53 pA/µm, 927 x 106, 4.78 mS/µm, 121.5 GHz and 2469 GHz respectively.https://journal.ump.edu.my/jmes/article/view/441channel dopingchannel lengthpillar thicknesssource/drain doping |
| spellingShingle | K. E. Kaharudin F. Salehuddin A. S. M. Zain Ameer F. Roslan Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction Journal of Mechanical Engineering and Sciences channel doping channel length pillar thickness source/drain doping |
| title | Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction |
| title_full | Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction |
| title_fullStr | Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction |
| title_full_unstemmed | Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction |
| title_short | Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction |
| title_sort | optimal design of junctionless double gate vertical mosfet using hybrid taguchi gra with ann prediction |
| topic | channel doping channel length pillar thickness source/drain doping |
| url | https://journal.ump.edu.my/jmes/article/view/441 |
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