Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction

Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction

Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable p...

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Bibliographic Details
Main Authors: K. E. Kaharudin, F. Salehuddin, A. S. M. Zain, Ameer F. Roslan
Format: Article
Language:English
Published: Universiti Malaysia Pahang Publishing 2019-09-01
Series:Journal of Mechanical Engineering and Sciences
Subjects:
channel doping
channel length
pillar thickness
source/drain doping
Online Access:https://journal.ump.edu.my/jmes/article/view/441

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