Photothermal Effects and Heat Conduction in Nanogranular Silicon Films

We present results on the photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm-sized crystalline Si nanoparticles (NP) deposited on glass substrates. Simulations of the absorbed light intens...

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Bibliographic Details
Main Authors: Bayan A. Kurbanova, Gauhar K. Mussabek, Viktor Y. Timoshenko, Vladimir Lysenko, Zhandos N. Utegulov
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/9/2379
Description
Summary:We present results on the photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm-sized crystalline Si nanoparticles (NP) deposited on glass substrates. Simulations of the absorbed light intensity and photo-induced temperature distribution across the Si NP films were carried out by using the Finite difference time domain (FDTD) and finite element mesh (FEM) modeling and the obtained data were compared with the local temperatures measured by micro-Raman spectroscopy and then was used for determining the heat conductivities <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>k</mi></semantics></math></inline-formula> in the films of various thicknesses. The cubic-to-hexagonal phase transition in Si NP films caused by laser-induced heating was found to be heavily influenced by the film thickness and heat-conductive properties of glass substrate, on which the films were deposited. The <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>k</mi></semantics></math></inline-formula> values in drop-casted Si nanogranular films were found to be in the range of lowest <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>k</mi></semantics></math></inline-formula> of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.
ISSN:2079-4991