Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/4/407 |
| _version_ | 1797538640347267072 |
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| author | Simonas Indrišiūnas Evaldas Svirplys Justinas Jorudas Irmantas Kašalynas |
| author_facet | Simonas Indrišiūnas Evaldas Svirplys Justinas Jorudas Irmantas Kašalynas |
| author_sort | Simonas Indrišiūnas |
| collection | DOAJ |
| description | Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the ablated trench is a useful method for partitioning of such substrates after the development of the electronics on a backside. However, in some cases damage to the component performance occurs. Therefore, the influence of various parameters of the laser processing, such as fluence in the spot size, substrate thickness, orientation, and the polarization of focused laser beam, to the formation of damage zones at both sides of the transparent substrate with thin coatings when ablating the trenches from one side was investigated. The vicinity effect of the ablated trenches on the performance of the electronics was also evaluated, confirming the laser micromachining suitability for the dicing of transparent wafers with high accuracy and flexibility. |
| first_indexed | 2024-03-10T12:34:18Z |
| format | Article |
| id | doaj.art-e52d971ab5574c47a744f617f33e7374 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T12:34:18Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-e52d971ab5574c47a744f617f33e73742023-11-21T14:26:31ZengMDPI AGMicromachines2072-666X2021-04-0112440710.3390/mi12040407Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a BacksideSimonas Indrišiūnas0Evaldas Svirplys1Justinas Jorudas2Irmantas Kašalynas3Laser Microfabrication Laboratory, Center for Physical Sciences and Technology (FTMC), Savanoriu Ave. 231, LT-02300 Vilnius, LithuaniaLaser Microfabrication Laboratory, Center for Physical Sciences and Technology (FTMC), Savanoriu Ave. 231, LT-02300 Vilnius, LithuaniaTerahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio 3, LT-10257 Vilnius, LithuaniaTerahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio 3, LT-10257 Vilnius, LithuaniaSapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the ablated trench is a useful method for partitioning of such substrates after the development of the electronics on a backside. However, in some cases damage to the component performance occurs. Therefore, the influence of various parameters of the laser processing, such as fluence in the spot size, substrate thickness, orientation, and the polarization of focused laser beam, to the formation of damage zones at both sides of the transparent substrate with thin coatings when ablating the trenches from one side was investigated. The vicinity effect of the ablated trenches on the performance of the electronics was also evaluated, confirming the laser micromachining suitability for the dicing of transparent wafers with high accuracy and flexibility.https://www.mdpi.com/2072-666X/12/4/407laser micromachiningsapphiresilicon carbideAlGaN/GaN heterostructureshigh-electron mobility devices |
| spellingShingle | Simonas Indrišiūnas Evaldas Svirplys Justinas Jorudas Irmantas Kašalynas Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside Micromachines laser micromachining sapphire silicon carbide AlGaN/GaN heterostructures high-electron mobility devices |
| title | Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside |
| title_full | Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside |
| title_fullStr | Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside |
| title_full_unstemmed | Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside |
| title_short | Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside |
| title_sort | laser processing of transparent wafers with a algan gan heterostructures and high electron mobility devices on a backside |
| topic | laser micromachining sapphire silicon carbide AlGaN/GaN heterostructures high-electron mobility devices |
| url | https://www.mdpi.com/2072-666X/12/4/407 |
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