Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...

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Bibliografiska uppgifter
Huvudupphovsmän: Simonas Indrišiūnas, Evaldas Svirplys, Justinas Jorudas, Irmantas Kašalynas
Materialtyp: Artikel
Språk:English
Publicerad: MDPI AG 2021-04-01
Serie:Micromachines
Ämnen:
laser micromachining
sapphire
silicon carbide
AlGaN/GaN heterostructures
high-electron mobility devices
Länkar:https://www.mdpi.com/2072-666X/12/4/407

Internet

https://www.mdpi.com/2072-666X/12/4/407

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