SWCNT-Si photodetector with voltage-dependent active surface
New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and characterization of a device consisting of a Sing...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2023-01-01
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| Series: | Nano Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2632-959X/ad12d9 |
| _version_ | 1797382477212286976 |
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| author | Daniele Capista Luca Lozzi Antonio Di Bartolomeo Filippo Giubileo Nadia Martucciello Maurizio Passacantando |
| author_facet | Daniele Capista Luca Lozzi Antonio Di Bartolomeo Filippo Giubileo Nadia Martucciello Maurizio Passacantando |
| author_sort | Daniele Capista |
| collection | DOAJ |
| description | New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and characterization of a device consisting of a Single-Walled Carbon Nanotube (SWCNT) film onto an n -type silicon substrate where the nitride interlayer between the nanotubes and the silicon has been intentionally etched to obtain different thicknesses. Three different silicon nitride thicknesses allow the formation of three regions, inside the same device, each with different photocurrents and responsivity behaviors. We show that by selecting specific biases, the photoresponse of the regions can be switched on and off. This peculiar behavior allows the device to be used as a photodetector with a voltage-dependent active surface. Scanning photo response imaging of the device surface, performed at different biases, highlights this behavior. |
| first_indexed | 2024-03-08T21:06:57Z |
| format | Article |
| id | doaj.art-e54b5d08350b401dbc7b07d8d5b10460 |
| institution | Directory Open Access Journal |
| issn | 2632-959X |
| language | English |
| last_indexed | 2024-03-08T21:06:57Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Nano Express |
| spelling | doaj.art-e54b5d08350b401dbc7b07d8d5b104602023-12-22T12:17:47ZengIOP PublishingNano Express2632-959X2023-01-015101500410.1088/2632-959X/ad12d9SWCNT-Si photodetector with voltage-dependent active surfaceDaniele Capista0Luca Lozzi1Antonio Di Bartolomeo2https://orcid.org/0000-0002-3629-726XFilippo Giubileo3https://orcid.org/0000-0003-2233-3810Nadia Martucciello4Maurizio Passacantando5https://orcid.org/0000-0002-3680-5295IHP–Leibniz Institut fuer innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyDepartment of Physical and Chemical Science, University of L’Aquila , Via Vetoio, 67100 Coppito, L’Aquila, ItalyDepartment of Physics ‘E.R. Caianiello’, University of Salerno , Fisciano 84084, Salerno, Italy; CNR-SPIN Salerno, Fisciano 84084, ItalyCNR-SPIN Salerno, Fisciano 84084, ItalyCNR-SPIN Salerno, Fisciano 84084, ItalyDepartment of Physical and Chemical Science, University of L’Aquila , Via Vetoio, 67100 Coppito, L’Aquila, ItalyNew works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and characterization of a device consisting of a Single-Walled Carbon Nanotube (SWCNT) film onto an n -type silicon substrate where the nitride interlayer between the nanotubes and the silicon has been intentionally etched to obtain different thicknesses. Three different silicon nitride thicknesses allow the formation of three regions, inside the same device, each with different photocurrents and responsivity behaviors. We show that by selecting specific biases, the photoresponse of the regions can be switched on and off. This peculiar behavior allows the device to be used as a photodetector with a voltage-dependent active surface. Scanning photo response imaging of the device surface, performed at different biases, highlights this behavior.https://doi.org/10.1088/2632-959X/ad12d9SWCNTphotodetectorsvoltagesactives |
| spellingShingle | Daniele Capista Luca Lozzi Antonio Di Bartolomeo Filippo Giubileo Nadia Martucciello Maurizio Passacantando SWCNT-Si photodetector with voltage-dependent active surface Nano Express SWCNT photodetectors voltages actives |
| title | SWCNT-Si photodetector with voltage-dependent active surface |
| title_full | SWCNT-Si photodetector with voltage-dependent active surface |
| title_fullStr | SWCNT-Si photodetector with voltage-dependent active surface |
| title_full_unstemmed | SWCNT-Si photodetector with voltage-dependent active surface |
| title_short | SWCNT-Si photodetector with voltage-dependent active surface |
| title_sort | swcnt si photodetector with voltage dependent active surface |
| topic | SWCNT photodetectors voltages actives |
| url | https://doi.org/10.1088/2632-959X/ad12d9 |
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