Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer
The narrow bandgap of the low-energy near-infrared (NIR) polymer would lead to overlap between adjacent energy levels, which is a major barrier to the preparation of Vis-NIR polymer bulk heterojunction (BHJ) photodetectors with small responsivity and photocurrent. In this study, a high-performance l...
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| Format: | Article |
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Elsevier
2022-07-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847822000181 |
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| author | Tao Han Zexin Wu Zhilong Deng Xiaofeng Zhang Sidi Yang Cuicui Chen Jiajia Zhu Shufang Ding Chunzhi Jiang |
| author_facet | Tao Han Zexin Wu Zhilong Deng Xiaofeng Zhang Sidi Yang Cuicui Chen Jiajia Zhu Shufang Ding Chunzhi Jiang |
| author_sort | Tao Han |
| collection | DOAJ |
| description | The narrow bandgap of the low-energy near-infrared (NIR) polymer would lead to overlap between adjacent energy levels, which is a major barrier to the preparation of Vis-NIR polymer bulk heterojunction (BHJ) photodetectors with small responsivity and photocurrent. In this study, a high-performance lateral inorganic-organic hybrid photodetector was constructed to eliminate this barrier by combining GaN nanowires (GaN-NWs) with PDPP3T:PC61BM-based BHJ. In stage one, high-quality GaN-NWs were synthesized by the catalyst-free CVD method. The mechanism for controlling GaN-NWs morphology by adjusting the NH3 flow rate was revealed. In stage two, the GaN-NWs with large electron mobility were used to accelerate the transfer of photogenerated carriers in the BHJ layer. Finally, compared with the BHJ device, the BHJ/GaN device demonstrated obvious improvements in responsivity and photocurrent at the wavelength between 400 and 1000 nm. The responsivity and photocurrent increased over 20-fold at the NIR band of 800–900 nm. Besides, owing to the energy level gradient effect, the BHJ/GaN device has a response speed of 7.8/<5.0 ms, which increases over three orders of magnitude than that of the GaN-NWs-based device (tr/tf: 7.1/10.9 s). Therefore, the novel device structure proposed in this work holds great potential for preparing high-performance Vis-NIR photodetectors. |
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| id | doaj.art-e5638137cb5d4ea680ba5cbc861a4962 |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T10:31:13Z |
| publishDate | 2022-07-01 |
| publisher | Elsevier |
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| series | Journal of Materiomics |
| spelling | doaj.art-e5638137cb5d4ea680ba5cbc861a49622023-09-02T09:15:50ZengElsevierJournal of Materiomics2352-84782022-07-0184806814Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transferTao Han0Zexin Wu1Zhilong Deng2Xiaofeng Zhang3Sidi Yang4Cuicui Chen5Jiajia Zhu6Shufang Ding7Chunzhi Jiang8Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, China; Corresponding author.Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaHunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaDepartment of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, China; National Engineering Laboratory for Modern Materials Surface Engineering Technology & the Key Lab of Guangdong for Modern Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou, 510650, China; Corresponding author. Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, China.Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaHunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaHunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaHunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaHunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, ChinaThe narrow bandgap of the low-energy near-infrared (NIR) polymer would lead to overlap between adjacent energy levels, which is a major barrier to the preparation of Vis-NIR polymer bulk heterojunction (BHJ) photodetectors with small responsivity and photocurrent. In this study, a high-performance lateral inorganic-organic hybrid photodetector was constructed to eliminate this barrier by combining GaN nanowires (GaN-NWs) with PDPP3T:PC61BM-based BHJ. In stage one, high-quality GaN-NWs were synthesized by the catalyst-free CVD method. The mechanism for controlling GaN-NWs morphology by adjusting the NH3 flow rate was revealed. In stage two, the GaN-NWs with large electron mobility were used to accelerate the transfer of photogenerated carriers in the BHJ layer. Finally, compared with the BHJ device, the BHJ/GaN device demonstrated obvious improvements in responsivity and photocurrent at the wavelength between 400 and 1000 nm. The responsivity and photocurrent increased over 20-fold at the NIR band of 800–900 nm. Besides, owing to the energy level gradient effect, the BHJ/GaN device has a response speed of 7.8/<5.0 ms, which increases over three orders of magnitude than that of the GaN-NWs-based device (tr/tf: 7.1/10.9 s). Therefore, the novel device structure proposed in this work holds great potential for preparing high-performance Vis-NIR photodetectors.http://www.sciencedirect.com/science/article/pii/S2352847822000181Vis-NIR photodetectorsLateral photodetectorsGaN nanowiresBulk heterojunctionOrganic-inorganic hybridOrganic materials |
| spellingShingle | Tao Han Zexin Wu Zhilong Deng Xiaofeng Zhang Sidi Yang Cuicui Chen Jiajia Zhu Shufang Ding Chunzhi Jiang Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer Journal of Materiomics Vis-NIR photodetectors Lateral photodetectors GaN nanowires Bulk heterojunction Organic-inorganic hybrid Organic materials |
| title | Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer |
| title_full | Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer |
| title_fullStr | Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer |
| title_full_unstemmed | Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer |
| title_short | Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer |
| title_sort | lateral organic inorganic hybrid vis nir photodetectors based on gan nanowires promoting photogenerated carriers transfer |
| topic | Vis-NIR photodetectors Lateral photodetectors GaN nanowires Bulk heterojunction Organic-inorganic hybrid Organic materials |
| url | http://www.sciencedirect.com/science/article/pii/S2352847822000181 |
| work_keys_str_mv | AT taohan lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT zexinwu lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT zhilongdeng lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT xiaofengzhang lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT sidiyang lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT cuicuichen lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT jiajiazhu lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT shufangding lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer AT chunzhijiang lateralorganicinorganichybridvisnirphotodetectorsbasedongannanowirespromotingphotogeneratedcarrierstransfer |