A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application
The hollow metal waveguides are attractive components for millimeter-wave circuits owing to low loss. To integrate with the front-end circuit, a transition from microstrip line to waveguide is required. In this article, a microstrip-to-waveguide transition is presented in the W-band by using an E-pl...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/23/12162 |
| _version_ | 1797463650257076224 |
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| author | Min Han Chengzhi Wang Chao Liu Shuwen Xiao Jianguang Ma Hui Sun |
| author_facet | Min Han Chengzhi Wang Chao Liu Shuwen Xiao Jianguang Ma Hui Sun |
| author_sort | Min Han |
| collection | DOAJ |
| description | The hollow metal waveguides are attractive components for millimeter-wave circuits owing to low loss. To integrate with the front-end circuit, a transition from microstrip line to waveguide is required. In this article, a microstrip-to-waveguide transition is presented in the W-band by using an E-plane probe with a parasitic patch. The probe is embedded into the waveguide along the center of the broad wall to excite the TE<sub>10</sub> mode. A backshort-circuited waveguide with a quarter wavelength is used to obtain sufficient energy coupling and achieve good impedance matching. The additional parasitic patch can introduce a new resonance at a low frequency to enhance the working bandwidth. Hence, the proposed transition achieves wide working bandwidth and low insertion loss. For verification, a back-to-back transition is constructed and measured. The measured results indicate that the proposed transition has a wide working bandwidth covering the entire W-band. The measured reflection coefficient is below −13 dB from 70 to 110 GHz and the average insert loss is 1.1 dB. Attributed to wide working bandwidth and simple structure, the proposed transition is attractive for W-band circuit systems. |
| first_indexed | 2024-03-09T17:53:46Z |
| format | Article |
| id | doaj.art-e5701dd5854648bb8b7d30d7a1de7648 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T17:53:46Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-e5701dd5854648bb8b7d30d7a1de76482023-11-24T10:31:57ZengMDPI AGApplied Sciences2076-34172022-11-0112231216210.3390/app122312162A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band ApplicationMin Han0Chengzhi Wang1Chao Liu2Shuwen Xiao3Jianguang Ma4Hui Sun5Institute of Systems Engineering, Academy of Military Sciences, Beijing 100082, ChinaNational Innovation Institute of Defense Technology, Academy of Military Sciences, Beijing 100082, ChinaInstitute of Systems Engineering, Academy of Military Sciences, Beijing 100082, ChinaInstitute of Systems Engineering, Academy of Military Sciences, Beijing 100082, ChinaInstitute of Systems Engineering, Academy of Military Sciences, Beijing 100082, ChinaInstitute of Systems Engineering, Academy of Military Sciences, Beijing 100082, ChinaThe hollow metal waveguides are attractive components for millimeter-wave circuits owing to low loss. To integrate with the front-end circuit, a transition from microstrip line to waveguide is required. In this article, a microstrip-to-waveguide transition is presented in the W-band by using an E-plane probe with a parasitic patch. The probe is embedded into the waveguide along the center of the broad wall to excite the TE<sub>10</sub> mode. A backshort-circuited waveguide with a quarter wavelength is used to obtain sufficient energy coupling and achieve good impedance matching. The additional parasitic patch can introduce a new resonance at a low frequency to enhance the working bandwidth. Hence, the proposed transition achieves wide working bandwidth and low insertion loss. For verification, a back-to-back transition is constructed and measured. The measured results indicate that the proposed transition has a wide working bandwidth covering the entire W-band. The measured reflection coefficient is below −13 dB from 70 to 110 GHz and the average insert loss is 1.1 dB. Attributed to wide working bandwidth and simple structure, the proposed transition is attractive for W-band circuit systems.https://www.mdpi.com/2076-3417/12/23/12162E-plane probemicrostrip-to-waveguide transitionparasitic patch |
| spellingShingle | Min Han Chengzhi Wang Chao Liu Shuwen Xiao Jianguang Ma Hui Sun A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application Applied Sciences E-plane probe microstrip-to-waveguide transition parasitic patch |
| title | A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application |
| title_full | A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application |
| title_fullStr | A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application |
| title_full_unstemmed | A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application |
| title_short | A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application |
| title_sort | wideband microstrip to waveguide transition using e plane probe with parasitic patch for w band application |
| topic | E-plane probe microstrip-to-waveguide transition parasitic patch |
| url | https://www.mdpi.com/2076-3417/12/23/12162 |
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