Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO<sub>3</sub>-CaMnO<sub>3</sub> Polycrystalline Thin Films

The effect of ferromagnetic CaMnO<sub>3</sub> (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO<sub>3</sub> is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure....

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Bibliographic Details
Main Authors: Abdelilah Lahmar, Jacem Zidani, Jamal Belhadi, Ilham Hamdi Alaoui, Hussam Musleh, Jehad Asad, Naji Al Dahoudi, Mimoun El Marssi
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Materials
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Online Access:https://www.mdpi.com/1996-1944/16/23/7392
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Summary:The effect of ferromagnetic CaMnO<sub>3</sub> (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO<sub>3</sub> is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched <i>P</i>–<i>E</i> hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching.
ISSN:1996-1944