Seed-induced crystallization of polycrystalline germanium thin films at low temperature
A recrystallization technology that is required for implementing Ge devices in the semiconductor back-end-of-line (BEOL) processing at temperatures below 450 °C is presented. A new seed-induced crystallization (SIC) is applied to the fabrication of polycrystalline Ge (poly-Ge) thin films at 400 °C....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-09-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719313749 |
| Summary: | A recrystallization technology that is required for implementing Ge devices in the semiconductor back-end-of-line (BEOL) processing at temperatures below 450 °C is presented. A new seed-induced crystallization (SIC) is applied to the fabrication of polycrystalline Ge (poly-Ge) thin films at 400 °C. While the process successfully achieved the crystalline fraction greater than 90% in Ge, it overcomes the problem of metal contamination in traditional metal-induced crystallization (MIC) technology by reducing the metal contamination to the levels below the detection limit of X-ray photoelectron spectroscopy (XPS). |
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| ISSN: | 2211-3797 |