Seed-induced crystallization of polycrystalline germanium thin films at low temperature
A recrystallization technology that is required for implementing Ge devices in the semiconductor back-end-of-line (BEOL) processing at temperatures below 450 °C is presented. A new seed-induced crystallization (SIC) is applied to the fabrication of polycrystalline Ge (poly-Ge) thin films at 400 °C....
| Glavni autori: | , |
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| Format: | Članak |
| Jezik: | English |
| Izdano: |
Elsevier
2019-09-01
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| Serija: | Results in Physics |
| Online pristup: | http://www.sciencedirect.com/science/article/pii/S2211379719313749 |