Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films
Photosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3 μm~7 μm thick PSPI films were deposited on differ...
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| Format: | Article |
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MDPI AG
2023-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/19/2642 |
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| author | Ruhan E. Ustad Vijay D. Chavan Honggyun Kim Min-ho Shin Sung-Kyu Kim Kyeong-Keun Choi Deok-kee Kim |
| author_facet | Ruhan E. Ustad Vijay D. Chavan Honggyun Kim Min-ho Shin Sung-Kyu Kim Kyeong-Keun Choi Deok-kee Kim |
| author_sort | Ruhan E. Ustad |
| collection | DOAJ |
| description | Photosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3 μm~7 μm thick PSPI films were deposited on different substrates, including Si, 50 nm SiN, 50 nm SiO<sub>2</sub>, 100 nm Cu, and 100 nm Al, for the optimization of the process of integration with Cu films. In situ temperature-dependent resistance measurements were conducted by using a four-point probe system to study the changes in resistance of the 70 nm thick Cu films on different dielectrics with thick diffusion films of 30 nm Mn, Co, and W films in a N<sub>2</sub> ambient. The lowest possible change in thickness due to annealing at the higher temperature ranges of 325 °C to 375 °C is displayed, which suggests the high stability of PSPI. The PSPI films show good adhesion with each Cu diffusion barrier up to 350 °C, and we believe that this will be helpful for new packaging applications, such as a 3D IC with a Cu interconnect. |
| first_indexed | 2024-03-10T21:39:11Z |
| format | Article |
| id | doaj.art-e5c97fa353e3408fb71d3ba80415d971 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T21:39:11Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-e5c97fa353e3408fb71d3ba80415d9712023-11-19T14:48:48ZengMDPI AGNanomaterials2079-49912023-09-011319264210.3390/nano13192642Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) FilmsRuhan E. Ustad0Vijay D. Chavan1Honggyun Kim2Min-ho Shin3Sung-Kyu Kim4Kyeong-Keun Choi5Deok-kee Kim6Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of KoreaElectrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of KoreaSemiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of KoreaNational Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of KoreaNational Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of KoreaNational Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of KoreaSemiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of KoreaPhotosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3 μm~7 μm thick PSPI films were deposited on different substrates, including Si, 50 nm SiN, 50 nm SiO<sub>2</sub>, 100 nm Cu, and 100 nm Al, for the optimization of the process of integration with Cu films. In situ temperature-dependent resistance measurements were conducted by using a four-point probe system to study the changes in resistance of the 70 nm thick Cu films on different dielectrics with thick diffusion films of 30 nm Mn, Co, and W films in a N<sub>2</sub> ambient. The lowest possible change in thickness due to annealing at the higher temperature ranges of 325 °C to 375 °C is displayed, which suggests the high stability of PSPI. The PSPI films show good adhesion with each Cu diffusion barrier up to 350 °C, and we believe that this will be helpful for new packaging applications, such as a 3D IC with a Cu interconnect.https://www.mdpi.com/2079-4991/13/19/2642polyimidephotosensitiveCu RDLresistivityadvanced packaging |
| spellingShingle | Ruhan E. Ustad Vijay D. Chavan Honggyun Kim Min-ho Shin Sung-Kyu Kim Kyeong-Keun Choi Deok-kee Kim Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films Nanomaterials polyimide photosensitive Cu RDL resistivity advanced packaging |
| title | Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films |
| title_full | Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films |
| title_fullStr | Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films |
| title_full_unstemmed | Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films |
| title_short | Thermal, Mechanical, and Electrical Stability of Cu Films in an Integration Process with Photosensitive Polyimide (PSPI) Films |
| title_sort | thermal mechanical and electrical stability of cu films in an integration process with photosensitive polyimide pspi films |
| topic | polyimide photosensitive Cu RDL resistivity advanced packaging |
| url | https://www.mdpi.com/2079-4991/13/19/2642 |
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