Electrothermal Analyses of Bandpass NGD RLC-Network Topologies

This paper develops an original study of temperature effect on the unfamiliar bandpass (BP) negative group delay (NGD) lumped passive circuits. The paper presents the first study of electrothermal analysis of electronic circuits classified as BP-NGD topologies. The considered BP-NGD passive cells ar...

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Main Authors: E. J. R. Sambatra, S. Ngoho, F. Haddad, M. Guerin, G. Fontgalland, W. Rahajandraibe, B. Ravelo
Format: Article
Language:English
Published: Advanced Electromagnetics 2023-03-01
Series:Advanced Electromagnetics
Subjects:
Online Access:https://www.aemjournal.org/index.php/AEM/article/view/2125
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author E. J. R. Sambatra
S. Ngoho
F. Haddad
M. Guerin
G. Fontgalland
W. Rahajandraibe
B. Ravelo
author_facet E. J. R. Sambatra
S. Ngoho
F. Haddad
M. Guerin
G. Fontgalland
W. Rahajandraibe
B. Ravelo
author_sort E. J. R. Sambatra
collection DOAJ
description This paper develops an original study of temperature effect on the unfamiliar bandpass (BP) negative group delay (NGD) lumped passive circuits. The paper presents the first study of electrothermal analysis of electronic circuits classified as BP-NGD topologies. The considered BP-NGD passive cells are mainly constituted by RLC-resonant networks. The equivalence between two basic BP-NGD topologies constituted by RLC-series and RLC-parallel networks is elaborated via the voltage transfer function (VTF) analogy. Then, the theoretical demonstrations are introduced to define the main specifications as the NGD center frequency, NGD value, attenuation and NGD bandwidth. The electrothermal innovative study is developed based on the temperature coefficient resistor (TCR) of elements constituting the BP-NGD circuits. With proofs of concept of RLC-series and RLC-parallel circuits operating with -500 ns NGD value at 13.56 MHz, calculated and simulated results showing are in excellent agreement. The sensitivity analyses of BP-NGD specifications in function of ambient temperature variation from 0°C to 100°C are investigated. The BP-NGD response variations versus frequency and temperature are characterized with thermo-frequency cartographies and discussed.
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spelling doaj.art-e5dfcf89264b49458c6b15f7f44626932023-03-30T00:54:41ZengAdvanced ElectromagneticsAdvanced Electromagnetics2119-02752023-03-01121Electrothermal Analyses of Bandpass NGD RLC-Network TopologiesE. J. R. Sambatra0S. Ngoho1F. Haddad2M. Guerin3G. Fontgalland4W. Rahajandraibe5B. Ravelo6Institut Supérieur de Technologie (ISTD)Association Française de Science des Systèmes (AFSCET)Aix-Marseille UniversityAix-Marseille UniversityFederal University of Campina GrandeAix-Marseille UniversityNanjing University of Information Science & TechnologyThis paper develops an original study of temperature effect on the unfamiliar bandpass (BP) negative group delay (NGD) lumped passive circuits. The paper presents the first study of electrothermal analysis of electronic circuits classified as BP-NGD topologies. The considered BP-NGD passive cells are mainly constituted by RLC-resonant networks. The equivalence between two basic BP-NGD topologies constituted by RLC-series and RLC-parallel networks is elaborated via the voltage transfer function (VTF) analogy. Then, the theoretical demonstrations are introduced to define the main specifications as the NGD center frequency, NGD value, attenuation and NGD bandwidth. The electrothermal innovative study is developed based on the temperature coefficient resistor (TCR) of elements constituting the BP-NGD circuits. With proofs of concept of RLC-series and RLC-parallel circuits operating with -500 ns NGD value at 13.56 MHz, calculated and simulated results showing are in excellent agreement. The sensitivity analyses of BP-NGD specifications in function of ambient temperature variation from 0°C to 100°C are investigated. The BP-NGD response variations versus frequency and temperature are characterized with thermo-frequency cartographies and discussed. https://www.aemjournal.org/index.php/AEM/article/view/2125Bandpass (BP) negative group delay (NGD)Electrothermal analysisNGD analysisCircuit theoryEquivalent topology
spellingShingle E. J. R. Sambatra
S. Ngoho
F. Haddad
M. Guerin
G. Fontgalland
W. Rahajandraibe
B. Ravelo
Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
Advanced Electromagnetics
Bandpass (BP) negative group delay (NGD)
Electrothermal analysis
NGD analysis
Circuit theory
Equivalent topology
title Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
title_full Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
title_fullStr Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
title_full_unstemmed Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
title_short Electrothermal Analyses of Bandpass NGD RLC-Network Topologies
title_sort electrothermal analyses of bandpass ngd rlc network topologies
topic Bandpass (BP) negative group delay (NGD)
Electrothermal analysis
NGD analysis
Circuit theory
Equivalent topology
url https://www.aemjournal.org/index.php/AEM/article/view/2125
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AT sngoho electrothermalanalysesofbandpassngdrlcnetworktopologies
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AT mguerin electrothermalanalysesofbandpassngdrlcnetworktopologies
AT gfontgalland electrothermalanalysesofbandpassngdrlcnetworktopologies
AT wrahajandraibe electrothermalanalysesofbandpassngdrlcnetworktopologies
AT bravelo electrothermalanalysesofbandpassngdrlcnetworktopologies