Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses
Amorphous silicon (<inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and...
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MDPI AG
2020-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/13/22/5296 |
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| author | Kirill Bronnikov Alexander Dostovalov Artem Cherepakhin Eugeny Mitsai Alexander Nepomniaschiy Sergei A. Kulinich Alexey Zhizhchenko Aleksandr Kuchmizhak |
| author_facet | Kirill Bronnikov Alexander Dostovalov Artem Cherepakhin Eugeny Mitsai Alexander Nepomniaschiy Sergei A. Kulinich Alexey Zhizhchenko Aleksandr Kuchmizhak |
| author_sort | Kirill Bronnikov |
| collection | DOAJ |
| description | Amorphous silicon (<inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements. |
| first_indexed | 2024-03-10T14:39:27Z |
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| id | doaj.art-e5fb973b32934b93b23ebafaf8827f7c |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T14:39:27Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
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| spelling | doaj.art-e5fb973b32934b93b23ebafaf8827f7c2023-11-20T21:59:06ZengMDPI AGMaterials1996-19442020-11-011322529610.3390/ma13225296Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond PulsesKirill Bronnikov0Alexander Dostovalov1Artem Cherepakhin2Eugeny Mitsai3Alexander Nepomniaschiy4Sergei A. Kulinich5Alexey Zhizhchenko6Aleksandr Kuchmizhak7Institute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, RussiaInstitute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaFar Eastern Federal University, 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaAmorphous silicon (<inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of <inline-formula><math display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.https://www.mdpi.com/1996-1944/13/22/5296amorphous siliconpolycrystalline siliconthin filmslaser-induced annealingfemtosecond laser pulsesRaman spectroscopy |
| spellingShingle | Kirill Bronnikov Alexander Dostovalov Artem Cherepakhin Eugeny Mitsai Alexander Nepomniaschiy Sergei A. Kulinich Alexey Zhizhchenko Aleksandr Kuchmizhak Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses Materials amorphous silicon polycrystalline silicon thin films laser-induced annealing femtosecond laser pulses Raman spectroscopy |
| title | Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses |
| title_full | Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses |
| title_fullStr | Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses |
| title_full_unstemmed | Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses |
| title_short | Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses |
| title_sort | large scale and localized laser crystallization of optically thick amorphous silicon films by near ir femtosecond pulses |
| topic | amorphous silicon polycrystalline silicon thin films laser-induced annealing femtosecond laser pulses Raman spectroscopy |
| url | https://www.mdpi.com/1996-1944/13/22/5296 |
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