Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product
This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The propo...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2017-09-01
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| Series: | Advances in Radio Science |
| Online Access: | https://www.adv-radio-sci.net/15/115/2017/ars-15-115-2017.pdf |
| _version_ | 1818528602714537984 |
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| author | S. Park X.-Q. Du M. Grözing M. Berroth |
| author_facet | S. Park X.-Q. Du M. Grözing M. Berroth |
| author_sort | S. Park |
| collection | DOAJ |
| description | This paper presents the design of a limiting amplifier with 1-to-3 fan-out
implementation in a 0.13 µm SiGe BiCMOS technology and gives a
detailed guideline to determine the circuit parameters of the amplifier for
optimum high-frequency performance based on simplified gain estimations. The
proposed design uses a Cherry-Hooper topology for bandwidth enhancement and
is optimized for maximum group delay flatness to minimize phase distortion of
the input signal. With regard to a high integration density and a small chip
area, the design employs no passive inductors which might be used to boost
the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout
simulation level, the limiting amplifier exhibits a gain-bandwidth-product of
14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a
peak-to-peak input voltage of 1.5 mV. The group delay variation within the
3 dB bandwidth is less than 0.5 ps and the power dissipation at a power
supply voltage of 3 V including output drivers is 837 mW. |
| first_indexed | 2024-12-11T06:52:08Z |
| format | Article |
| id | doaj.art-e66f8f097053409ea6c2e31120b181b7 |
| institution | Directory Open Access Journal |
| issn | 1684-9965 1684-9973 |
| language | deu |
| last_indexed | 2024-12-11T06:52:08Z |
| publishDate | 2017-09-01 |
| publisher | Copernicus Publications |
| record_format | Article |
| series | Advances in Radio Science |
| spelling | doaj.art-e66f8f097053409ea6c2e31120b181b72022-12-22T01:16:52ZdeuCopernicus PublicationsAdvances in Radio Science1684-99651684-99732017-09-011511512110.5194/ars-15-115-2017Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-ProductS. Park0X.-Q. Du1M. Grözing2M. Berroth3Institute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Stuttgart, GermanyInstitute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Stuttgart, GermanyInstitute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Stuttgart, GermanyInstitute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Stuttgart, GermanyThis paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.https://www.adv-radio-sci.net/15/115/2017/ars-15-115-2017.pdf |
| spellingShingle | S. Park X.-Q. Du M. Grözing M. Berroth Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product Advances in Radio Science |
| title | Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product |
| title_full | Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product |
| title_fullStr | Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product |
| title_full_unstemmed | Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product |
| title_short | Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product |
| title_sort | design of a 0 13 thinsp µm sige limiting amplifier with 14 6 thz gain bandwidth product |
| url | https://www.adv-radio-sci.net/15/115/2017/ars-15-115-2017.pdf |
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