Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product
This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The propo...
Main Authors: | S. Park, X.-Q. Du, M. Grözing, M. Berroth |
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Format: | Article |
Language: | deu |
Published: |
Copernicus Publications
2017-09-01
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Series: | Advances in Radio Science |
Online Access: | https://www.adv-radio-sci.net/15/115/2017/ars-15-115-2017.pdf |
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