Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is comparable to the size of etching gas ions. Re...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-03-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3284 |
| _version_ | 1797880978773901312 |
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| author | V. V. Emelyanov |
| author_facet | V. V. Emelyanov |
| author_sort | V. V. Emelyanov |
| collection | DOAJ |
| description | At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is comparable to the size of etching gas ions. Requirements for plasma technology: permissible defects, selectivity (material selectivity), line width control, etching uniformity are becoming more stringent and, as a consequence, more difficult to implement. To increase the rate and selectivity of plasma-chemical etching of silicon nitride films during plasma processing of a gas mixture consisting of both a fluorine-containing gas and oxygen, sulfur hexafluoride with a concentration of 70–91 vol.% was used as a fluorine-containing gas with an oxygen concentration of 9–30 vol.%. |
| first_indexed | 2024-04-10T03:11:42Z |
| format | Article |
| id | doaj.art-e6a2c3230cb54e9c82d796cc6c9ef8d7 |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:11:42Z |
| publishDate | 2022-03-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-e6a2c3230cb54e9c82d796cc6c9ef8d72023-03-13T07:33:22ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482022-03-01201485410.35596/1729-7648-2022-20-1-48-541776Formation of Functional Silicon Nitride Layers by Selective Plasmochemical EtchingV. V. Emelyanov0Belarusian State University of Informatics and RadioelectronicsAt present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is comparable to the size of etching gas ions. Requirements for plasma technology: permissible defects, selectivity (material selectivity), line width control, etching uniformity are becoming more stringent and, as a consequence, more difficult to implement. To increase the rate and selectivity of plasma-chemical etching of silicon nitride films during plasma processing of a gas mixture consisting of both a fluorine-containing gas and oxygen, sulfur hexafluoride with a concentration of 70–91 vol.% was used as a fluorine-containing gas with an oxygen concentration of 9–30 vol.%.https://doklady.bsuir.by/jour/article/view/3284silicon nitrideplasma-chemical etchinggas mixture |
| spellingShingle | V. V. Emelyanov Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon nitride plasma-chemical etching gas mixture |
| title | Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching |
| title_full | Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching |
| title_fullStr | Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching |
| title_full_unstemmed | Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching |
| title_short | Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching |
| title_sort | formation of functional silicon nitride layers by selective plasmochemical etching |
| topic | silicon nitride plasma-chemical etching gas mixture |
| url | https://doklady.bsuir.by/jour/article/view/3284 |
| work_keys_str_mv | AT vvemelyanov formationoffunctionalsiliconnitridelayersbyselectiveplasmochemicaletching |