A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer
Abstract SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connecti...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-11-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12188 |
| _version_ | 1828158751517966336 |
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| author | Mahdi Delzendeh Sarfejo Hesamodin Allahyari Hamid Bahrami Ahmad Afifi Mohammad Ali Latif Zadeh Ehya Yavari Mahdi Ghavidel Jalise |
| author_facet | Mahdi Delzendeh Sarfejo Hesamodin Allahyari Hamid Bahrami Ahmad Afifi Mohammad Ali Latif Zadeh Ehya Yavari Mahdi Ghavidel Jalise |
| author_sort | Mahdi Delzendeh Sarfejo |
| collection | DOAJ |
| description | Abstract SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connection is an inevitable choice. To tackle the challenge of imbalanced current sharing problem between parallel SiC MOSFETs, a new passive compensator based on planar transformer (PT) is proposed here. Compared with the conventional transformer compensators, parasitic elements are adjustable and predictable in PT compensators, which is especially important for mass production aims. After explaining the concept of the physical operation of the PT compensator, the whole parasitic elements of the PT compensator are formulated. Based on estimated parasitic elements and using the finite element method (FEM), an optimum PT structure is extracted for imbalances in current sharing of parallel SiC MOSFETs. Afterward, the PT design is discussed in detail and then, a boost converter is constructed. Finally, the experimental results are presented to verify the reliability, accuracy, and effectiveness of the theoretical results. |
| first_indexed | 2024-04-11T23:50:18Z |
| format | Article |
| id | doaj.art-e6a41f643051466c8cdec76440f78e5b |
| institution | Directory Open Access Journal |
| issn | 1755-4535 1755-4543 |
| language | English |
| last_indexed | 2024-04-11T23:50:18Z |
| publishDate | 2021-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Power Electronics |
| spelling | doaj.art-e6a41f643051466c8cdec76440f78e5b2022-12-22T03:56:31ZengWileyIET Power Electronics1755-45351755-45432021-11-0114142400241210.1049/pel2.12188A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformerMahdi Delzendeh Sarfejo0Hesamodin Allahyari1Hamid Bahrami2Ahmad Afifi3Mohammad Ali Latif Zadeh4Ehya Yavari5Mahdi Ghavidel Jalise6Department of Electrical Engineering SBU (Shahid Beheshti University) Tehran IranFaculty of Electrical Engineering K. N. Toosi University of Technology Tehran IranFaculty of Electrical and computer Engineering Malek Ashtar University of Technology IranFaculty of Electrical and computer Engineering Malek Ashtar University of Technology IranFaculty of Electrical and computer Engineering Malek Ashtar University of Technology IranFaculty of Electrical and computer Engineering Malek Ashtar University of Technology IranFaculty of Electrical and computer Engineering Malek Ashtar University of Technology IranAbstract SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connection is an inevitable choice. To tackle the challenge of imbalanced current sharing problem between parallel SiC MOSFETs, a new passive compensator based on planar transformer (PT) is proposed here. Compared with the conventional transformer compensators, parasitic elements are adjustable and predictable in PT compensators, which is especially important for mass production aims. After explaining the concept of the physical operation of the PT compensator, the whole parasitic elements of the PT compensator are formulated. Based on estimated parasitic elements and using the finite element method (FEM), an optimum PT structure is extracted for imbalances in current sharing of parallel SiC MOSFETs. Afterward, the PT design is discussed in detail and then, a boost converter is constructed. Finally, the experimental results are presented to verify the reliability, accuracy, and effectiveness of the theoretical results.https://doi.org/10.1049/pel2.12188Power semiconductor devicesInsulated gate field effect transistorsFinite element analysisInductors and transformers |
| spellingShingle | Mahdi Delzendeh Sarfejo Hesamodin Allahyari Hamid Bahrami Ahmad Afifi Mohammad Ali Latif Zadeh Ehya Yavari Mahdi Ghavidel Jalise A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer IET Power Electronics Power semiconductor devices Insulated gate field effect transistors Finite element analysis Inductors and transformers |
| title | A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer |
| title_full | A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer |
| title_fullStr | A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer |
| title_full_unstemmed | A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer |
| title_short | A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer |
| title_sort | passive compensator for imbalances in current sharing of parallel sic mosfets based on planar transformer |
| topic | Power semiconductor devices Insulated gate field effect transistors Finite element analysis Inductors and transformers |
| url | https://doi.org/10.1049/pel2.12188 |
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