Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

<p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has b...

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Bibliographic Details
Main Authors:	Yu Ing-Song, Cheng Henry, Mashanov Vladimir, Ulyanov Vladimir, Timofeev Vyacheslav, Nikiforov Aleksandr, Pchelyakov Oleg
Format:	Article
Language:	English
Published:	SpringerOpen 2011-01-01
Series:	Nanoscale Research Letters
Online Access:	http://www.nanoscalereslett.com/content/6/1/85

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