| Summary: | Low-temperature synthesis of Bi<sub>2</sub>Se<sub>3</sub> thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi<sub>2</sub>Se<sub>3</sub> film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi<sub>2</sub>Se<sub>3</sub> film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm<sup>2</sup>/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi<sub>2</sub>Se<sub>3</sub> thin film showed an enhanced power factor of as high as 3.41 μW/cmK<sup>2</sup>. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi<sub>2</sub>Se<sub>3</sub> films on Al<sub>2</sub>O<sub>3</sub> (001) substrates demonstrated promising thermoelectric properties.
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