Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate
Low-temperature synthesis of Bi<sub>2</sub>Se<sub>3</sub> thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi<sub>2</sub>Se<sub>3</sub> film demonstrated excellent crystallinity d...
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| Format: | Article |
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MDPI AG
2023-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/20/2785 |
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| author | Ya-Hui Chuai Yun-Fan Wang Yu Bai |
| author_facet | Ya-Hui Chuai Yun-Fan Wang Yu Bai |
| author_sort | Ya-Hui Chuai |
| collection | DOAJ |
| description | Low-temperature synthesis of Bi<sub>2</sub>Se<sub>3</sub> thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi<sub>2</sub>Se<sub>3</sub> film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi<sub>2</sub>Se<sub>3</sub> film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm<sup>2</sup>/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi<sub>2</sub>Se<sub>3</sub> thin film showed an enhanced power factor of as high as 3.41 μW/cmK<sup>2</sup>. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi<sub>2</sub>Se<sub>3</sub> films on Al<sub>2</sub>O<sub>3</sub> (001) substrates demonstrated promising thermoelectric properties. |
| first_indexed | 2024-03-10T21:00:07Z |
| format | Article |
| id | doaj.art-e6d9bb79763044648e990b29427bb6ca |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T21:00:07Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-e6d9bb79763044648e990b29427bb6ca2023-11-19T17:36:06ZengMDPI AGNanomaterials2079-49912023-10-011320278510.3390/nano13202785Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow RateYa-Hui Chuai0Yun-Fan Wang1Yu Bai2School of Physics, Changchun University of Science and Technology, 7089 Satellite Road, Changchun 130022, ChinaSchool of Physics, Changchun University of Science and Technology, 7089 Satellite Road, Changchun 130022, ChinaSchool of Physics, Changchun University of Science and Technology, 7089 Satellite Road, Changchun 130022, ChinaLow-temperature synthesis of Bi<sub>2</sub>Se<sub>3</sub> thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi<sub>2</sub>Se<sub>3</sub> film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi<sub>2</sub>Se<sub>3</sub> film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm<sup>2</sup>/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi<sub>2</sub>Se<sub>3</sub> thin film showed an enhanced power factor of as high as 3.41 μW/cmK<sup>2</sup>. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi<sub>2</sub>Se<sub>3</sub> films on Al<sub>2</sub>O<sub>3</sub> (001) substrates demonstrated promising thermoelectric properties.https://www.mdpi.com/2079-4991/13/20/2785Bi<sub>2</sub>Se<sub>3</sub> filmsemiconductor thermoelectric materialsPECVDtransmittancethermoelectric properties |
| spellingShingle | Ya-Hui Chuai Yun-Fan Wang Yu Bai Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate Nanomaterials Bi<sub>2</sub>Se<sub>3</sub> film semiconductor thermoelectric materials PECVD transmittance thermoelectric properties |
| title | Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate |
| title_full | Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate |
| title_fullStr | Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate |
| title_full_unstemmed | Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate |
| title_short | Structural, Optical, Electrical, and Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub> Films Deposited at a High Se/Bi Flow Rate |
| title_sort | structural optical electrical and thermoelectric properties of bi sub 2 sub se sub 3 sub films deposited at a high se bi flow rate |
| topic | Bi<sub>2</sub>Se<sub>3</sub> film semiconductor thermoelectric materials PECVD transmittance thermoelectric properties |
| url | https://www.mdpi.com/2079-4991/13/20/2785 |
| work_keys_str_mv | AT yahuichuai structuralopticalelectricalandthermoelectricpropertiesofbisub2subsesub3subfilmsdepositedatahighsebiflowrate AT yunfanwang structuralopticalelectricalandthermoelectricpropertiesofbisub2subsesub3subfilmsdepositedatahighsebiflowrate AT yubai structuralopticalelectricalandthermoelectricpropertiesofbisub2subsesub3subfilmsdepositedatahighsebiflowrate |