Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips
Abstract This article presents a study of the influence of the substrate bias on the microstructure, preferred orientation, and mechanical and electrical properties of nanotwinned Cu film. The formation of a nanotwinned structure and (111) surface orientation can be properly controlled by applied su...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-09-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-19825-x |
| _version_ | 1798036274239504384 |
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| author | Zi-Hong Yang Po-Ching Wu Tung-Han Chuang |
| author_facet | Zi-Hong Yang Po-Ching Wu Tung-Han Chuang |
| author_sort | Zi-Hong Yang |
| collection | DOAJ |
| description | Abstract This article presents a study of the influence of the substrate bias on the microstructure, preferred orientation, and mechanical and electrical properties of nanotwinned Cu film. The formation of a nanotwinned structure and (111) surface orientation can be properly controlled by applied substrate bias. High density nanotwinned structures were introduced into Cu films sputtered on SiC substrates with over 90% of (111)-orientation at − 150 V. Densely packed Cu nanotwins were observed within the columnar grains stacked up on each other along the film growth direction, with an average twin spacing of 19.4 nm. The Cu films deposited on SiC substrate via bias sputtering had surface roughness of 8.6 to 15.8 nm. The resistivity of the copper nanotwinned films sputtered with various substrate biases varied. The optimal indentation, 2.3 GPa, was found in the nanotwinned Cu film sputtered with a bias voltage of − 150 V. The effects of Ar ion bombardment on microstructure, surface morphology and properties are further discussed. |
| first_indexed | 2024-04-11T21:10:27Z |
| format | Article |
| id | doaj.art-e6eab9a266d44615a821417a89781082 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T21:10:27Z |
| publishDate | 2022-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-e6eab9a266d44615a821417a897810822022-12-22T04:03:03ZengNature PortfolioScientific Reports2045-23222022-09-0112111010.1038/s41598-022-19825-xEffects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chipsZi-Hong Yang0Po-Ching Wu1Tung-Han Chuang2Institute of Materials Science and Engineering, National Taiwan UniversityInstitute of Materials Science and Engineering, National Taiwan UniversityInstitute of Materials Science and Engineering, National Taiwan UniversityAbstract This article presents a study of the influence of the substrate bias on the microstructure, preferred orientation, and mechanical and electrical properties of nanotwinned Cu film. The formation of a nanotwinned structure and (111) surface orientation can be properly controlled by applied substrate bias. High density nanotwinned structures were introduced into Cu films sputtered on SiC substrates with over 90% of (111)-orientation at − 150 V. Densely packed Cu nanotwins were observed within the columnar grains stacked up on each other along the film growth direction, with an average twin spacing of 19.4 nm. The Cu films deposited on SiC substrate via bias sputtering had surface roughness of 8.6 to 15.8 nm. The resistivity of the copper nanotwinned films sputtered with various substrate biases varied. The optimal indentation, 2.3 GPa, was found in the nanotwinned Cu film sputtered with a bias voltage of − 150 V. The effects of Ar ion bombardment on microstructure, surface morphology and properties are further discussed.https://doi.org/10.1038/s41598-022-19825-x |
| spellingShingle | Zi-Hong Yang Po-Ching Wu Tung-Han Chuang Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips Scientific Reports |
| title | Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips |
| title_full | Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips |
| title_fullStr | Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips |
| title_full_unstemmed | Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips |
| title_short | Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips |
| title_sort | effects of substrate bias on the sputtering of high density 111 nanotwinned cu films on sic chips |
| url | https://doi.org/10.1038/s41598-022-19825-x |
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