Comparative study of the ion-slicing mechanism of Y-cut LiNbO3
Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliat...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5112792 |
| _version_ | 1818339829369274368 |
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| author | Kai Huang Zhongxu Li Youquan Yan Xiaomeng Zhao Wenqin Li Tiangui You Shibin Zhang Hongyan Zhou Jiajie Lin Wenhui Xu Ailun Yi Hao Huang Min Zhou Wenjie Yu Junyu Xie Xiaobin Zeng Renjie Liu Xin Ou |
| author_facet | Kai Huang Zhongxu Li Youquan Yan Xiaomeng Zhao Wenqin Li Tiangui You Shibin Zhang Hongyan Zhou Jiajie Lin Wenhui Xu Ailun Yi Hao Huang Min Zhou Wenjie Yu Junyu Xie Xiaobin Zeng Renjie Liu Xin Ou |
| author_sort | Kai Huang |
| collection | DOAJ |
| description | Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and “plate-like” exfoliation, while the Y-cut LN shows the unique “rolled-up” exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates. |
| first_indexed | 2024-12-13T15:33:13Z |
| format | Article |
| id | doaj.art-e6ee3f2b76d34b6ab1c11fbad8cd7c57 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T15:33:13Z |
| publishDate | 2019-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e6ee3f2b76d34b6ab1c11fbad8cd7c572022-12-21T23:40:07ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085001085001-610.1063/1.5112792001908ADVComparative study of the ion-slicing mechanism of Y-cut LiNbO3Kai Huang0Zhongxu Li1Youquan Yan2Xiaomeng Zhao3Wenqin Li4Tiangui You5Shibin Zhang6Hongyan Zhou7Jiajie Lin8Wenhui Xu9Ailun Yi10Hao Huang11Min Zhou12Wenjie Yu13Junyu Xie14Xiaobin Zeng15Renjie Liu16Xin Ou17State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaBeijing Zhongkexin Electronics Equipment Co., Ltd, Beijing 101111, ChinaBeijing Zhongkexin Electronics Equipment Co., Ltd, Beijing 101111, ChinaShanghai Kingstone Semiconductor Joint Stock Co., Ltd, Shanghai 201399, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaIon-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and “plate-like” exfoliation, while the Y-cut LN shows the unique “rolled-up” exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates.http://dx.doi.org/10.1063/1.5112792 |
| spellingShingle | Kai Huang Zhongxu Li Youquan Yan Xiaomeng Zhao Wenqin Li Tiangui You Shibin Zhang Hongyan Zhou Jiajie Lin Wenhui Xu Ailun Yi Hao Huang Min Zhou Wenjie Yu Junyu Xie Xiaobin Zeng Renjie Liu Xin Ou Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 AIP Advances |
| title | Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 |
| title_full | Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 |
| title_fullStr | Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 |
| title_full_unstemmed | Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 |
| title_short | Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 |
| title_sort | comparative study of the ion slicing mechanism of y cut linbo3 |
| url | http://dx.doi.org/10.1063/1.5112792 |
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