Comparative study of the ion-slicing mechanism of Y-cut LiNbO3
Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliat...
Main Authors: | Kai Huang, Zhongxu Li, Youquan Yan, Xiaomeng Zhao, Wenqin Li, Tiangui You, Shibin Zhang, Hongyan Zhou, Jiajie Lin, Wenhui Xu, Ailun Yi, Hao Huang, Min Zhou, Wenjie Yu, Junyu Xie, Xiaobin Zeng, Renjie Liu, Xin Ou |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-08-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5112792 |
Similar Items
-
Analog Ion‐Slicing LiNbO3 Memristor Based on Hopping Transport for Neuromorphic Computing
by: Jiejun Wang, et al.
Published: (2023-10-01) -
Correlated disorder by defects clusters in LiNbO3 single crystals after crystal ion-slicing
by: Simone Dolabella, et al.
Published: (2023-07-01) -
LiNbO3 dynamic memristors for reservoir computing
by: Yuanxi Zhao, et al.
Published: (2023-04-01) -
A first-principle study on the electronic properties of substitutionally Cu (I, II)-doped LiNbO3
by: Xiaobin Liu, et al.
Published: (2018-02-01) -
Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate
by: Runchun Zhang, et al.
Published: (2018-05-01)