Assessing Effects of van der Waals Corrections on Elasticity of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub> in DFT Calculations

As a promising room-temperature thermoelectric material, the elastic properties of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub> (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two...

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Bibliographic Details
Main Authors: Qing Peng, Xinjie Ma, Xiaoyu Yang, Shuai Zhao, Xiaoze Yuan, Xiaojia Chen
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Materials
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Online Access:https://www.mdpi.com/1996-1944/16/19/6482
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Summary:As a promising room-temperature thermoelectric material, the elastic properties of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub> (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two typical van der Waals corrections on the elasticity of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub> nanocomposites using first-principles calculations within the frame of density functional theory. The two van der Waals correction methods, PBE-D3 and vdW-DFq, were examined and compared to PBE functionals without van der Waals correction. Interestingly, our findings reveal that the lattice constant of the system shrinks by approximately 1% when the PBE-D3 interaction is included. This leads to significant changes in certain mechanical properties. We conducted a comprehensive assessment of the elastic performance of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub>, including Young’s modulus, Poisson’s ratio, bulk modulus, etc., for different concentration of Sb in a 40-atom simulation box. The presence or absence of van der Waals corrections does not change the trend of elasticity with respect to the concentration of Sb; instead, it affects the absolute values. Our investigation not only clarifies the influence of van der Waals correction methods on the elasticity of Mg<sub>3</sub>Bi<sub>2−x</sub>Sb<sub>x</sub>, but could also help inform the material design of room-temperature thermoelectric devices, as well as the development of vdW corrections in DFT calculations.
ISSN:1996-1944