Front-Wall Illumination of Spray-Deposited PbS-Si HJ Detector
(n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbSheterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelengthrange (450-1150 nm) revealed that the quantum efficiency plateau fairly conformsto that of Si homojunction. Significant specific detectivity of ab...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2012-07-01
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| Series: | Engineering and Technology Journal |
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| Online Access: | https://etj.uotechnology.edu.iq/article_57242_216f76f7394f59475e85c4801a2eeb79.pdf |
| Summary: | (n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbSheterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelengthrange (450-1150 nm) revealed that the quantum efficiency plateau fairly conformsto that of Si homojunction. Significant specific detectivity of about 8.5 x 1011 cmHz1/2 W-1 has been obtained at 850 nm wavelength. Signal to noise ratio revealedan optimum operation voltage at 2.5 V. |
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| ISSN: | 1681-6900 2412-0758 |