Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
<p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force m...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9747-2 |
| _version_ | 1827838299106967552 |
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| author | Hakkarainen Teemu Schramm Andreas Tukiainen Antti Ahorinta Risto Toikkanen Lauri Guina Mircea |
| author_facet | Hakkarainen Teemu Schramm Andreas Tukiainen Antti Ahorinta Risto Toikkanen Lauri Guina Mircea |
| author_sort | Hakkarainen Teemu |
| collection | DOAJ |
| description | <p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.</p> |
| first_indexed | 2024-03-12T07:03:39Z |
| format | Article |
| id | doaj.art-e70a07b065574b9893ce0ea4587f056c |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:03:39Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-e70a07b065574b9893ce0ea4587f056c2023-09-02T23:37:55ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151218921896Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInPHakkarainen TeemuSchramm AndreasTukiainen AnttiAhorinta RistoToikkanen LauriGuina Mircea<p>Abstract</p> <p>We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.</p>http://dx.doi.org/10.1007/s11671-010-9747-2Molecular beam epitaxyIII-V semiconductorsQuantum dotsOrderingInAsGaInP |
| spellingShingle | Hakkarainen Teemu Schramm Andreas Tukiainen Antti Ahorinta Risto Toikkanen Lauri Guina Mircea Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP Nanoscale Research Letters Molecular beam epitaxy III-V semiconductors Quantum dots Ordering InAs GaInP |
| title | Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP |
| title_full | Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP |
| title_fullStr | Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP |
| title_full_unstemmed | Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP |
| title_short | Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP |
| title_sort | lateral ordering of inas quantum dots on cross hatch patterned gainp |
| topic | Molecular beam epitaxy III-V semiconductors Quantum dots Ordering InAs GaInP |
| url | http://dx.doi.org/10.1007/s11671-010-9747-2 |
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