Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power
With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z<sup>2&...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8673739/ |
| _version_ | 1819078683207401472 |
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| author | Carlos Navarro Carlos Marquez Santiago Navarro Carmen Lozano Sehyun Kwon Yong-Tae Kim Francisco Gamiz |
| author_facet | Carlos Navarro Carlos Marquez Santiago Navarro Carmen Lozano Sehyun Kwon Yong-Tae Kim Francisco Gamiz |
| author_sort | Carlos Navarro |
| collection | DOAJ |
| description | With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z<sup>2</sup>-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells. |
| first_indexed | 2024-12-21T19:16:59Z |
| format | Article |
| id | doaj.art-e7299ec5cdda464b8432f513278b3dc8 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-21T19:16:59Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-e7299ec5cdda464b8432f513278b3dc82022-12-21T18:53:02ZengIEEEIEEE Access2169-35362019-01-017402794028410.1109/ACCESS.2019.29071518673739Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-PowerCarlos Navarro0https://orcid.org/0000-0002-7846-4599Carlos Marquez1https://orcid.org/0000-0003-0159-9951Santiago Navarro2Carmen Lozano3Sehyun Kwon4Yong-Tae Kim5Francisco Gamiz6Departamento de Electrónica y Tecnología de Computadores, University of Granada, Granada, SpainDepartamento de Electrónica y Tecnología de Computadores, University of Granada, Granada, SpainDepartamento de Electrónica y Tecnología de Computadores, University of Granada, Granada, SpainDepartamento de Electrónica y Tecnología de Computadores, University of Granada, Granada, SpainKorean Institute of Science and Technology, Seoul, South KoreaKorean Institute of Science and Technology, Seoul, South KoreaDepartamento de Electrónica y Tecnología de Computadores, University of Granada, Granada, SpainWith the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z<sup>2</sup>-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells.https://ieeexplore.ieee.org/document/8673739/1T-DRAMcapacitor-lessFD-SOIgermaniummemorylow-power |
| spellingShingle | Carlos Navarro Carlos Marquez Santiago Navarro Carmen Lozano Sehyun Kwon Yong-Tae Kim Francisco Gamiz Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power IEEE Access 1T-DRAM capacitor-less FD-SOI germanium memory low-power |
| title | Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power |
| title_full | Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power |
| title_fullStr | Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power |
| title_full_unstemmed | Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power |
| title_short | Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power |
| title_sort | simulation perspectives of sub 1v single supply z sup 2 sup fet 1t dram cells for low power |
| topic | 1T-DRAM capacitor-less FD-SOI germanium memory low-power |
| url | https://ieeexplore.ieee.org/document/8673739/ |
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