Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors

We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measur...

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Bibliographic Details
Main Authors: Jakub Zázvorka, Jan Franc, Lukáš Beran, Pavel Moravec, Jakub Pekárek, Martin Veis
Format: Article
Language:English
Published: Taylor & Francis Group 2016-01-01
Series:Science and Technology of Advanced Materials
Subjects:
Online Access:http://dx.doi.org/10.1080/14686996.2016.1250105
Description
Summary:We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium. We applied a refined theoretical model of the surface layer to evaluate the spectroscopic ellipsometry measurements. In this way we studied the dynamics and growth rate of the oxide layer within a month after chemical etching of the samples. We observed two phases in the evolution of the oxide layer on all studied samples. A rapid growth was visible within five days after the chemical treatment followed by semi-saturation and a decrease in the growth rate after the first week. After one month all the samples showed an oxide layer about 3 nm thick. The oxide thickness was correlated with leakage current degradation with time after surface preparation.
ISSN:1468-6996
1878-5514