Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral respo...

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Main Authors: R. Alchaar, J. B. Rodriguez, L. Höglund, S. Naureen, P. Christol
Format: Article
Language:English
Published: AIP Publishing LLC 2019-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5094703
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author R. Alchaar
J. B. Rodriguez
L. Höglund
S. Naureen
P. Christol
author_facet R. Alchaar
J. B. Rodriguez
L. Höglund
S. Naureen
P. Christol
author_sort R. Alchaar
collection DOAJ
description In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.
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spelling doaj.art-e7e9970ed8dc4b289eeb2ee2509553d02022-12-22T03:15:05ZengAIP Publishing LLCAIP Advances2158-32262019-05-0195055012055012-810.1063/1.5094703031905ADVCharacterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domainR. Alchaar0J. B. Rodriguez1L. Höglund2S. Naureen3P. Christol4IES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIRnova AB, Electrum 236 - C5, SE-164 40 Kista, SwedenIRnova AB, Electrum 236 - C5, SE-164 40 Kista, SwedenIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIn this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.http://dx.doi.org/10.1063/1.5094703
spellingShingle R. Alchaar
J. B. Rodriguez
L. Höglund
S. Naureen
P. Christol
Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
AIP Advances
title Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
title_full Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
title_fullStr Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
title_full_unstemmed Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
title_short Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
title_sort characterization of an inas gasb type ii superlattice barrier photodetector operating in the lwir domain
url http://dx.doi.org/10.1063/1.5094703
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