Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the p...

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Bibliographic Details
Main Authors: Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN HEMT
buffer trap modeling
charge trapping
physics-based models
Online Access:https://ieeexplore.ieee.org/document/9509414/
Description
Summary:In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula> as trap species.
ISSN:2168-6734

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