Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the p...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9509414/ |
| _version_ | 1818915729049649152 |
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| author | Mamta Pradhan Mohammed Alomari Matthias Moser Dirk Fahle Herwig Hahn Michael Heuken Joachim N. Burghartz |
| author_facet | Mamta Pradhan Mohammed Alomari Matthias Moser Dirk Fahle Herwig Hahn Michael Heuken Joachim N. Burghartz |
| author_sort | Mamta Pradhan |
| collection | DOAJ |
| description | In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula> as trap species. |
| first_indexed | 2024-12-20T00:06:54Z |
| format | Article |
| id | doaj.art-e8048e097cbd4bdabb15a26b5cde3f5d |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-20T00:06:54Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-e8048e097cbd4bdabb15a26b5cde3f5d2022-12-21T20:00:38ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01974875510.1109/JEDS.2021.31035969509414Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT ModelMamta Pradhan0https://orcid.org/0000-0002-6386-5971Mohammed Alomari1Matthias Moser2Dirk Fahle3Herwig Hahn4Michael Heuken5Joachim N. Burghartz6Neue Halbleiter Devices, Institut für Mikroelektronik Stuttgart, Stuttgart, GermanyNeue Halbleiter Devices, Institut für Mikroelektronik Stuttgart, Stuttgart, GermanyNeue Halbleiter Devices, Institut für Mikroelektronik Stuttgart, Stuttgart, GermanyAIXTRON SE, Herzogenrath, GermanyAIXTRON SE, Herzogenrath, GermanyAIXTRON SE, Herzogenrath, GermanyInstitut für Mikroelektronik Stuttgart, Stuttgart, GermanyIn this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">$\text{C}_{N}$ </tex-math></inline-formula> as trap species.https://ieeexplore.ieee.org/document/9509414/GaN HEMTbuffer trap modelingcharge trappingphysics-based models |
| spellingShingle | Mamta Pradhan Mohammed Alomari Matthias Moser Dirk Fahle Herwig Hahn Michael Heuken Joachim N. Burghartz Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model IEEE Journal of the Electron Devices Society GaN HEMT buffer trap modeling charge trapping physics-based models |
| title | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
| title_full | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
| title_fullStr | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
| title_full_unstemmed | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
| title_short | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
| title_sort | physical modeling of charge trapping effects in gan si devices and incorporation in the asm hemt model |
| topic | GaN HEMT buffer trap modeling charge trapping physics-based models |
| url | https://ieeexplore.ieee.org/document/9509414/ |
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