Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire

A series of four-terminal V<sub>7</sub>(Bz)<sub>8</sub>-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V<sub>7</sub>(Bz)<sub>8</sub>). The spin-polarized V<sub>7</sub>(Bz)<sub>8&l...

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Main Authors: Hong Yu, Yan Shang, Yangyang Hu, Lei Pei, Guiling Zhang
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/13/15/2270
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author Hong Yu
Yan Shang
Yangyang Hu
Lei Pei
Guiling Zhang
author_facet Hong Yu
Yan Shang
Yangyang Hu
Lei Pei
Guiling Zhang
author_sort Hong Yu
collection DOAJ
description A series of four-terminal V<sub>7</sub>(Bz)<sub>8</sub>-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V<sub>7</sub>(Bz)<sub>8</sub>). The spin-polarized V<sub>7</sub>(Bz)<sub>8</sub> as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green’s function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (<i>V</i><sub>S</sub>) and gate voltages (<i>V</i><sub>G</sub>), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V<sub>7</sub>(Bz)<sub>8</sub> and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V<sub>7</sub>(Bz)<sub>8</sub>. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V<sub>7</sub>(Bz)<sub>8</sub> is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V<sub>7</sub>(Bz)<sub>8</sub>-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.
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spelling doaj.art-e82286c4e708464f9679412225b54cac2023-11-18T23:22:25ZengMDPI AGNanomaterials2079-49912023-08-011315227010.3390/nano13152270Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene NanowireHong Yu0Yan Shang1Yangyang Hu2Lei Pei3Guiling Zhang4School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, ChinaSchool of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, ChinaSchool of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, ChinaSchool of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, ChinaSchool of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, ChinaA series of four-terminal V<sub>7</sub>(Bz)<sub>8</sub>-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V<sub>7</sub>(Bz)<sub>8</sub>). The spin-polarized V<sub>7</sub>(Bz)<sub>8</sub> as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green’s function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (<i>V</i><sub>S</sub>) and gate voltages (<i>V</i><sub>G</sub>), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V<sub>7</sub>(Bz)<sub>8</sub> and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V<sub>7</sub>(Bz)<sub>8</sub>. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V<sub>7</sub>(Bz)<sub>8</sub> is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V<sub>7</sub>(Bz)<sub>8</sub>-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.https://www.mdpi.com/2079-4991/13/15/2270spin-polarizedfour-terminal devicewrinkled graphene nanoribbonV<sub>7</sub>(Bz)<sub>8</sub>
spellingShingle Hong Yu
Yan Shang
Yangyang Hu
Lei Pei
Guiling Zhang
Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
Nanomaterials
spin-polarized
four-terminal device
wrinkled graphene nanoribbon
V<sub>7</sub>(Bz)<sub>8</sub>
title Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
title_full Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
title_fullStr Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
title_full_unstemmed Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
title_short Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire
title_sort transport property of wrinkled graphene nanoribbon tuned by spin polarized gate made of vanadium benzene nanowire
topic spin-polarized
four-terminal device
wrinkled graphene nanoribbon
V<sub>7</sub>(Bz)<sub>8</sub>
url https://www.mdpi.com/2079-4991/13/15/2270
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AT yanshang transportpropertyofwrinkledgraphenenanoribbontunedbyspinpolarizedgatemadeofvanadiumbenzenenanowire
AT yangyanghu transportpropertyofwrinkledgraphenenanoribbontunedbyspinpolarizedgatemadeofvanadiumbenzenenanowire
AT leipei transportpropertyofwrinkledgraphenenanoribbontunedbyspinpolarizedgatemadeofvanadiumbenzenenanowire
AT guilingzhang transportpropertyofwrinkledgraphenenanoribbontunedbyspinpolarizedgatemadeofvanadiumbenzenenanowire