First designing of a silicene-based optical MOSFET with outstanding performance
Abstract Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperatur...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-33620-2 |
| _version_ | 1797841043624820736 |
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| author | Hamed Emami-Nejad Ali mir Zeinab Lorestaniweiss Ali Farmani Reza Talebzadeh |
| author_facet | Hamed Emami-Nejad Ali mir Zeinab Lorestaniweiss Ali Farmani Reza Talebzadeh |
| author_sort | Hamed Emami-Nejad |
| collection | DOAJ |
| description | Abstract Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration. |
| first_indexed | 2024-04-09T16:24:34Z |
| format | Article |
| id | doaj.art-e82cd3666cd64661a92dca304de70be3 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-09T16:24:34Z |
| publishDate | 2023-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-e82cd3666cd64661a92dca304de70be32023-04-23T11:16:55ZengNature PortfolioScientific Reports2045-23222023-04-0113111110.1038/s41598-023-33620-2First designing of a silicene-based optical MOSFET with outstanding performanceHamed Emami-Nejad0Ali mir1Zeinab Lorestaniweiss2Ali Farmani3Reza Talebzadeh4Faculty of Engineering, Lorestan UniversityFaculty of Engineering, Lorestan UniversityFaculty of Science, Lorestan UniversityFaculty of Engineering, Lorestan UniversityFaculty of Engineering, Lorestan UniversityAbstract Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.https://doi.org/10.1038/s41598-023-33620-2 |
| spellingShingle | Hamed Emami-Nejad Ali mir Zeinab Lorestaniweiss Ali Farmani Reza Talebzadeh First designing of a silicene-based optical MOSFET with outstanding performance Scientific Reports |
| title | First designing of a silicene-based optical MOSFET with outstanding performance |
| title_full | First designing of a silicene-based optical MOSFET with outstanding performance |
| title_fullStr | First designing of a silicene-based optical MOSFET with outstanding performance |
| title_full_unstemmed | First designing of a silicene-based optical MOSFET with outstanding performance |
| title_short | First designing of a silicene-based optical MOSFET with outstanding performance |
| title_sort | first designing of a silicene based optical mosfet with outstanding performance |
| url | https://doi.org/10.1038/s41598-023-33620-2 |
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